Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

Zhong, Zhenyang; Halilovic, Alma; Fromherz, T.; Schäffler, F.; Bauer, G.

doi:10.1063/1.1581986

Cited by 126 publications

(101 citation statements)

References 13 publications

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“…Consequently, some years ago a templated selfassembly of semiconductor nanostructures was introduced, [30][31][32][33][34][35][36][37] combining growth on patterned substrates for the definition of an initial two-dimensionally periodic island layer with subsequent vertical ordering due to the strain fields of the buried quantum dots in a multidot layer system. 38,39 So far, in particular, three-dimensionally ordered structures of InAs/GaAs ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

“…Lithographic techniques are best suited for the fabrication of a two-dimensional ͑2D͒ patterned Si template with sufficient perfection in periodicity and size of the predefined nucleation sites for the dots. For this purpose, electron-beam ͑e-beam͒ lithography, 32 optical interference lithography, 33 and ion-beam lithography 34,35 have been used to fabricate prepatterned Si substrates. Whereas the first two approaches write the pattern for the nucleation site for each individual dot sequentially, the optical interference technique allows the prepatterning of large 2D arrays in a single exposure.…”

Section: Introductionmentioning

confidence: 99%

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X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal

et al. 2009

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High-resolution x-ray diffraction was employed to study the structural properties of a three-dimensional periodic arrangement of SiGe quantum dots in a Si matrix. Using extreme ultraviolet lithography at a synchrotron source a two-dimensional array of pits ͑period 90ϫ 100 nm 2 ͒ was defined and transferred into a ͑001͒ Si wafer by reactive ion etching. By molecular-beam epitaxy SiGe islands of about 30 nm diameter and 3 nm height were grown into the pits. Subsequent deposition of Si spacer layers of 10 nm thickness and SiGe island layers results in a three-dimensionally periodic arrangement of quantum dots, mediated by the strain fields of the buried dots. Their so far unmatched structural perfection is assessed by coplanar x-ray diffractometry using synchrotron radiation. Reciprocal-space maps around the ͑004͒ and ͑224͒ reciprocal-lattice maps were recorded and analyzed to get quantitative information on the disorder of the dot positions and to obtain the mean Ge content of the dots. In addition, information on the strain fields was deduced from the analysis of the diffraction data. Together with atomic force microscopy data on the island shape and size distribution, a complete structural characterization is achieved.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal

et al. 2009

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“…Several experiments (e.g. [223]) have demonstrated that both positional order and size uniformity can be obtained (see Figure 8(a)), provided that suitable growth conditions are matched [226]. Simulations studying the island growth on wavypatterned substrates have been reported in Refs.…”

Section: Substrate Patterningmentioning

confidence: 99%

“…The patterning of the substrate is a well-established method to direct and control the growth of islands into ordered arrays, with improved shape and size homogeneity [221][222][223][224]. From the point of view of the modelling, the effect of patterning turns into a modulation of the chemical potential.…”

Section: Substrate Patterningmentioning

confidence: 99%

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Bergamaschini

Salvalaglio

Backofen

et al. 2016

Advances in Physics: X

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Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing phenomena. Examples include threedimensional island formation, injection of dislocations, mixing between film and substrate atoms. Their relative importance depends on the specific growth conditions, giving rise to a very complex scenario. The need for an optimal control over heteroepitaxial films and/or nanostructures is widespread: semiconductor epitaxy by molecular beam epitaxy or chemical vapour deposition is nowadays exploited also in industrial environments. Simulation models can be precious in limiting the parameter space to be sampled while aiming at films/nanostructures with the desired properties. In order to be appealing (and useful) to an applied audience, such models must yield predictions directly comparable with experimental data. This implies matching typical time scales and sizes, while offering a satisfactory description of the main physical driving forces. It is the aim of the present review to show that continuum models of semiconductor heteroepitaxy evolved significantly, providing a promising tool (even a working tool, in some cases) to comply with the above requirements. Several examples, spanning from the nanometre to the micron scale, are illustrated. Current limitations and future research directions are also discussed.

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“…Today several techniques are used to obtain ordered arrays of Ge(Si) nanoislands. In recent years, to organize arrays of Ge(Si) islands, they use their growth on an undulating surface formed by deposition of , containing a grid of misfit dislocations [5], the growth in pre-structured Si substrates [6]. Application of these techniques allows obtaining the ordered chains of nanoislands with a high linear density, but in this case their two-dimensional density still remains low.…”

Section: Introductionmentioning

confidence: 99%

Influence of small miscuts on self-ordered growth of Ge nanoislands

Gudymenko¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Using high-resolution X-ray diffraction (HRXRD), we have investigated lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses deposited on a strained x x 1 Ge Si − sublayer. We observed that the high lateral ordering degree is initiated by ordered modulation of non-uniform deformation fields. This modulation is induced by small (∼0.3°) misorientation of Si substrate from [001] direction. Finally, we show that the miscut can be the source of perfectly ordered nanoisland arrays in two dimensions when the growth is performed on the strained SiGe (001) sublayer. The effect of substrate miscut can be amplified tuning the deviation of buffer layer surface from [001] growth direction via increasing the Ge content.

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Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

Cited by 126 publications

References 13 publications

X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal

X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Influence of small miscuts on self-ordered growth of Ge nanoislands

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