Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs

Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors

“…E peak is the peak sub-band energy, μ S and μ D are the Fermi potential energies of the source and drain, respectively, and k B is the Boltzmann constant. −1/2 and +1/2 are the Fermi-Dirac integral of the order (−1/2, +1/2) respectively (see [19] and [20] for analytical approximation of −1/2 and +1/2 ).…”

Two-dimensional quantum mechanical modeling of nanotransistors

“…The NEGF approach has been quite successful in modeling steady state transport in a wide variety of one dimensional (1D) semiconductor structures. 20,21 A number of groups have started developing theory and simulation for fully quantum mechanical two dimensional simulation of MOSFETs using the: real space approach, [22][23][24] k-space approach, 25 Wigner function approach, 26 and non equilibrium Green's function approach. 13,27,28 Others groups have taken a hybrid approach using the Monte Carlo method.…”

Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model

“…The difference between CL and QM descriptions in concentration distributions is the maximum location of electron concentration distribution. According to the CL model, the maximum is localized at the interface, whereas it is shifted from interface according the quantum model [16]. Figure 8 indicates the dependence of the energy states E ij at the silicon interface on the interface electric field.…”

“…Under the large gate voltage, the energy band will be bent at the Si-SiO 2 interface region as shown in Figure 4. To simulate the QM behaviour in MOS inversion layer, Equations (2) and (12) have to be solved separately for the ellipsoidal silicon symmetry via the different effective masses in the quantization directions [16]. In QM simulation, we assume the usual effective mass values for silicon: transverse electron mass m t ¼ 0:2245m 0 ; and longitudinal electron mass m l ¼ 0:9163m 0 : Therefore, two families of energy levels E i1 and E i2 exist, with m d1 ¼ m t for electrons from two ellipsoids ðj ¼ 1; n v1 ¼ 2Þ; and m d2 ¼ ðm t m l Þ 1=2 for electrons from four ellipsoids ðj ¼ 2; n v2 ¼ 4Þ; respectively.…”