Two dimensional simulation of patternable conducting polymer electrode based organic thin film transistor

Nair, Shiny; Kathiresan, M.; Mukundan, T.

doi:10.1088/1361-6641/aaa223

Cited by 10 publications

(8 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Through the current study, two different organic semiconductors are used as the active layer for the simulated OFET. The selected two organic semiconductors are polyaniline (PANI) and pentacene, where all input electrical parameters are captured from the literature and listed in the table 1 [39][40][41][42]. Concerning device dimensions, two different scales have been chosen, the first one is a micro-scale OFET (µ-OFET) with a channel length of 15 μm.…”

Section: Carrier Transport Simulation Modelmentioning

confidence: 99%

Numerical Modelling of Carrier Transport in Organic Field Effect Transistors

Hussien

Abdellatif

2022

Preprint

View full text Add to dashboard Cite

Organic field effect transistors (OFETs), used in the fabrication of nano-sensors, are one of the most promising devices in the field of organic electronics, because of their light weight, flexible and low fabrication cost. However, the optimization of such OFETs is still in an early stage due to the very limited analytical as well as numerical models presented in the literature. This research presses to demonstrate a numerical carrier transport model based on finite element method (FEM), to investigate the I-V characteristic of OFETs. Two various organic semiconductor materials have been included in the study, polyaniline and pentacene, where a micro-scale as well as a nano-scale models have been presented. OFETs have been studied in terms of channel length, dielectric thickness, and doping level impact. We nominated the threshold voltage, the on/off current ratio, the sub threshold swing, and the field effect mobility’s as the main output evaluating parameters. The numerical model has shown the criticality of the doping effect on tuning the device flowing drain current, to exceed 300 μA saturation current, along with threshold voltage of -0.1 V under a channel length of 30 nm. Additionally, the study highlights the effectiveness of the polyaniline over pentacene as nano-channel length OFET, due to the boosted conductivity of polyaniline with respect to pentacene.

show abstract

Section: Carrier Transport Simulation Modelmentioning

confidence: 99%

Numerical Modelling of Carrier Transport in Organic Field Effect Transistors

Hussien

Abdellatif

2022

Preprint

View full text Add to dashboard Cite

show abstract

“…In the past, the impact of contact effects was treated by many research groups [11][12][13][14][15][16][17][18][19][20][21]. Recently, many efforts were also done on reducing the contact effects, such as testing different materials as contact electrodes [22,23], the insertion of layers at the metal-semiconductor interface [24,25], or the use of molecular doping [26]; and also on working toward an universal compact model of organic transistor technologies that includes the contact effects [27].…”

Section: Introductionmentioning

confidence: 99%

Versatile model for the contact region of organic thin-film transistors

Romero

González

Deen

et al. 2020

Organic Electronics

View full text Add to dashboard Cite

Contact effects in organic thin film transistors (OTFTs) remain an important problem to be solved in these devices. Therefore, the correct physio-chemical modeling of the contact regions in OTFTs is necessary. In this work, a standard model for the contact region of OTFTs is proposed. It is a versatile model that describes the current-voltage characteristics of different kinds of contacts. It reproduces the behavior of Schottky barrier or space-charge limited contacts. It is a simple unified model since only a single parameter is necessary in order to distinguish between both kinds of contacts. The model is easily integrated in a generic compact model for the current-voltage characteristics of OTFTs. The resulting compact model, used in combination with an evolutionary parameter extraction procedure, allows to extract the intrinsic parameters and the current-voltage curves at the contact of single short-channel transistors. There is no need to use transistors with multiple channel lengths to accurately characterize the contact region or the active channel of the transistor. The model is tested with published experimental data of OTFTs with Schottky barrier or space-charge limited contacts. Finally, the method has been used as a diagnostic tool to analyze how an ammonia sensor reacts to different concentrations of the ammonia gas. Interestingly, alterations in the contact region have been detected when the gas concentration varies, transforming the space-charge limited contact of a pristine OTFT into a Schottky barrier contact under the exposure of gas.

show abstract

“…In the current architecture, PANI is selected as an active OSC, while poly(methyl methacrylate) (PMMA) is chosen to act as a gate oxide layer. Input electrical parameters are captured from the literature and listed in Table 1 37–40 . Alternatively, device dimensions are listed in Table 2.…”

Section: Simulation Model and Dataset Generationmentioning

confidence: 99%

OFET Informatics: Observing the impact of organic transistor's design parameters on the device output performance using a machine learning algorithm

Mosalam

Hussien

Abdellatif

2023

Int J Numerical Modelling

View full text Add to dashboard Cite

Organic field effect transistors (OFETs), used in the fabrication of nano‐sensors, are one of the most promising devices in organic electronics because of their lightweight, flexible, and low fabrication cost. However, the numerical modeling of such OFETs is still in an early stage due to the minimal analytical as well as numerical models presented in the literature. This research aims to demonstrate an experimentally verified machine‐learning model by investigating an OFET with polyaniline as a p‐type organic semiconductor. OFET's threshold voltage, on/off current ratio, subthreshold swing, and device mobilities are studied as the primary output chiasmatic parameters. The random‐forest machine learning model has shown the criticality of the doping effect on turning the OFET to depletion mode, with positive threshold voltage, under doping higher than cm−3. Additionally, the study highlights the effectiveness of the gate oxide thickness in controlling the OFET threshold voltage. A 50 nm oxide thickness showed sufficiency to have a non‐depleted OFET operation.

show abstract

Two dimensional simulation of patternable conducting polymer electrode based organic thin film transistor

Cited by 10 publications

References 43 publications

Numerical Modelling of Carrier Transport in Organic Field Effect Transistors

Numerical Modelling of Carrier Transport in Organic Field Effect Transistors

Versatile model for the contact region of organic thin-film transistors

OFET Informatics: Observing the impact of organic transistor's design parameters on the device output performance using a machine learning algorithm

Contact Info

Product

Resources

About