Two-dimensional SnSe material for solar cells and rechargeable batteries

Shen, Yan; Zhang, Yaofang; Huo, Jiale; Li, Xiang; Yan, Zirui; Pan, Yingwen; Sun, Wenping; Deng, Nanping; Kang, Weimin

doi:10.1016/j.est.2023.107958

Cited by 18 publications

(7 citation statements)

References 154 publications

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“…Issues such as defect states, Auger recombination, challenges with band alignment, and difficulties in achieving phase purity growth are major hurdles, keeping the PCE of SnSe solar cells below 7%. 161 Significant efforts are needed to address and overcome these challenges. Notably, vacancies of Sn play a crucial role in determining the conduction type in SnS.…”

Section: D Semiconductors For Optics and Photonicsmentioning

confidence: 99%

“…Despite its theoretical power conversion efficiency (PCE) prediction reaching 30%, SnSe-based solar cells face several limiting factors that impact their performance. Issues such as defect states, Auger recombination, challenges with band alignment, and difficulties in achieving phase purity growth are major hurdles, keeping the PCE of SnSe solar cells below 7% . Significant efforts are needed to address and overcome these challenges.…”

Section: D Photonicsmentioning

confidence: 99%

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Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

Song,

Rahaman,

Jariwala

2024

ACS Nano

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2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

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Section: D Semiconductors For Optics and Photonicsmentioning

confidence: 99%

Section: D Photonicsmentioning

confidence: 99%

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

Song,

Rahaman,

Jariwala

2024

ACS Nano

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“…Tin monochalcogenides SnE (E = S, Se, Te) have attracted much attention as semiconductors with good optical properties for photovoltaics, photodetectors, and other electronic devices. − Of these, SnS and SnSe are layered materials with accordion-like zigzag structures. SnSe has also attracted a great deal of attention as a high-performance thermoelectric material due to its high phonon anharmonicity and extremely low lattice thermal conductivity, κ l . , Since SnS has a crystal structure similar to that of SnSe, and S is less toxic than Se and more abundant than Te, SnS has the potential to be an effective, environmentally friendly thermoelectric material.…”

Section: Introductionmentioning

confidence: 99%

Electronic and Thermal Transport Properties of Nanostructured Thermoelectric Materials Sintered from Chemically Synthesized Tin Sulfide Nanoparticles and Effects of Ag and Se Doping

Kobayashi,

Takahashi,

Moore

et al. 2024

ACS Appl. Energy Mater.

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To shine light on the mechanisms involved in the doping of the sustainable thermoelectric material SnS with Ag and Se, we present a detailed investigation into Ag-and Se-doped SnS nanoparticles (NPs). SnS NPs, Ag-doped SnS NPs, and Ag-doped SnS 1−x Se x NPs were chemically synthesized and sintered into pellets by hot-press. The structure and thermoelectric, electronic, and thermal transport properties were then investigated using a variety of techniques. As a result, it was found that when Ag-doped SnS NPs were sintered two types of Ag were present in the sintered pellets: one in the form of segregated Ag-rich nanoprecipitates and the other in the form of interlayer intercalated Ag ions. In contrast, when Ag-doped SnS 1−x Se x NPs were sintered, Se was found to form a homogeneous solid solution. The effects of these three impurity-derived structures on the electronic and thermal transport properties were investigated. The final ZT values for SnS doped with 1.5 at% Ag (SnS:Ag) and SnS 0.9 Se 0.1 :Ag, in which SnS:Ag was further doped with Se, were 0.09 at 666 K and 0.14 at 667 K, respectively.

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“…The electrical properties required for a high-performance TE are similar to those needed for many other optoelectronic applications, and the Sn and Ge monochalcogenides SnS/SnSe and GeS/GeSe have both been widely explored as absorber materials for thin-film solar cells. 31–36 SnSe has been identified as an extremely promising TE material with an ultra-high bulk ZT max ≈ 2.6 at 923 K, 37 a good ZT over a wide temperature range of 300–773 K, 38 and an even higher polycrystalline ZT max ≈ 3.1 at 773 K. 39 SnS shows very similar structural chemistry to SnSe, and is advantageous due to the higher abundance and lower toxicity of S, but has yet to demonstrate comparable TE performance. 40–42…”

Section: Introductionmentioning

confidence: 99%