Two-dimensional spatial light modulators fabricated in Si/PLZT

Lin, Tuo; Erşen, Ali; Wang, J. H.; Dasgupta, Samhita; Esener, Sadik C.; Lee, Sing H.

doi:10.1364/ao.29.001595

Cited by 28 publications

(6 citation statements)

References 7 publications

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“…There has been more than 50 types of OASLM produced in the eighties and nineties [159]. Many different SLMs have been proposed and many prototypes fabricated, like liquid crystal SLMs [160][161], magneto-optic SLMs [162], multiple quantum wells devices [163] , Si PLZT SLMs [164] and deformable mirror devices [165]. However, very few of these SLMs have survived.…”

Section: Research Done In the Field Of Optical Computing Based On Optmentioning

confidence: 99%

Optical bistability in mesoporous silicon microcavity resonators

Pham

Qiao

Guan

et al. 2011

Journal of Applied Physics

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Porous silicon (PSi) has been shown to be a material with varieties of nonlinear optical properties. These properties have been discussed in terms of its nature of photoluminescence mechanism such as quantum confinement, surface states and the role of impurities. PSi has also been shown to be a useful material for optical devices, and have potential applications in fields such as bio-sensing and efficient lighting. In the following thesis, I present my theoretical and experimental results in studying a nonlinear optical property, known as optical bistability, in mesoporous silicon microcavity devices. The results show significant optical hysteresis in the transmission and reflection properties of mesoporous silicon microcavities when illuminated with a 150 nanosecond pulsed laser at 532 nm. The optical hysteresis is shown to be transient in nature and the properties are strongly dependent on the porosity of the cavity layer. The onset and damage threshold intensity are also shown to be porosity dependent. Modeling suggests that the observed effects are due to changes in the nonlinear refractive index and the transient lifetime increases with increasing porosity. The role of surface states was also investigated on influencing the bistable process by passivating the internal porous surface with hydrosilylation chemistry. The role of the number of periods in the cavity structure is also studied. The cavity is doped with quantum dot to improve its switching intensity. The optical bistable property of the cavity was also investigated by using a 532 nm continuous wave (CW) laser with maximum power of 10 mW, modulated by an optical chopper. The only sample that yields significant hysteresis is the sample doped with quantum dot, with millisecond respone time. The results show that the sample doped with quantum dot shows both electronic and thermal process in forming optical hysteresis. Finally, I develop a theoretical model to study the transient hysteresis shape. The model suggests that the power and pulse width of the excitation laser source strongly influence the shaping of the bistable curves. The nature of the nonlinear refractive index is also quantified in terms of the power and the width of the excitation pulse. The third order nonlinear coefficient is calculated to be in the order of 10-10 esu while the passivated samples yield results in the order of 10-9 esu, which agree with previous findings in literature.

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Section: Research Done In the Field Of Optical Computing Based On Optmentioning

confidence: 99%

Optical bistability in mesoporous silicon microcavity resonators

Pham

Qiao

Guan

et al. 2011

Journal of Applied Physics

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“…Some have phase transitions at room temperatures (5 • C for BaTiO 3 [26]) but others like LiNbO 3 have much higher phase transition temperatures (>1000 • C [26]). PLZT suffers heat damage only above 900 • C [36]. Both the crystal and ceramic devices are fragile with ceramic devices also being susceptible to voltage damage (50 V [36]) and humidity [35].…”

Section: Electro-optic Devicesmentioning

confidence: 99%

“…PLZT suffers heat damage only above 900 • C [36]. Both the crystal and ceramic devices are fragile with ceramic devices also being susceptible to voltage damage (50 V [36]) and humidity [35]. The lifetime of crystal devices is usually extremely long, [25] but for ceramic devices the lifetime can be as short as 50 cycles if the material is not optimized (contamination problems) [35].…”

Section: Electro-optic Devicesmentioning

confidence: 99%

“…On the other hand ceramic PLZT films can be fabricated with CVD [33,37] or sol-gel processes [35] and are less expensive than electro-optic crystals [38]. Pockels-effect crystal devices require high voltages (3.9 kV for BSO [25]) while ceramic PLZT requires usually less than 50 V [23,33,36]. As for frame rates, LiNbO 3 can have frame rates of 8000 MHz [91] while PLZT frame rates of 100 MHz have been reported [25].…”

Section: Electro-optic Devicesmentioning

confidence: 99%

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A review of active optical devices: II. Phase modulation

Mias¹,

Camon²

2008

J. Micromech. Microeng.

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This article presents a review of active optical devices. We examine different technologies that can be used for active wavefront modulation in a large range of applications including displays, electronic paper and adaptive optics. We introduce this review by describing the different light modulations that can be achieved namely amplitude, phase or wavelength modulation. We then examine the different criteria used in order to assess the different technologies and describe in detail each technology including the method of light modulation, its characteristics and applications. The review is divided into two parts: the first one is devoted to amplitude modulation and the second to phase modulation.

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“…These materials include BaTiO 3 , (Pb,La)(Zr,Ti)0 3 (PLZT) and Pb(Mg,Nb)0 3 -PbTiO 3 (PMN-PT) solid solutions.12-1 4 All these thin film materials can be formed by means of the metal-organic chemical liquid deposition (MOCLD) technique or other methods. These thin film materials are usually polycrystalline although quasi-single-crystal films can be formed on lattice-matched substrates.…”

Section: Fundamentals Of Tfi Phase Modulatormentioning

confidence: 99%

<title>Fabrication and characterization of thin ferroelectric interferometers for light modulation</title>

Wang

Zheng

et al. 2000

Optical Storage and Optical Information Processing

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A thin ferroelectric interferometer (TFI) structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate (PLZT) electrooptic material, deposited from a chemical precursor solution onto an ITO-coated dielectric mirror stack. Light intensity modulation in both transmission and reflection modes, and phase modulation in the reflection mode were demonstrated. Experimental and simulation data show that TFI devices can be fast switching with a low driving voltage. Variations of the basic TFI structure can be used for phase tunable spatial light modulators (SLM's) and laser beam steering devices. Design principles, fabrication procedure and the preliminary performance of the devices are described.

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Two-dimensional spatial light modulators fabricated in Si/PLZT

Cited by 28 publications

References 7 publications

Optical bistability in mesoporous silicon microcavity resonators

Optical bistability in mesoporous silicon microcavity resonators

A review of active optical devices: II. Phase modulation

<title>Fabrication and characterization of thin ferroelectric interferometers for light modulation</title>

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