Two-dimensional transistors with reconfigurable polarities for secure circuits

Wu, Peng; Reis, Dayane; Hu, Xiaobo Sharon; Appenzeller, Joerg

doi:10.1038/s41928-020-00511-7

Cited by 133 publications

(136 citation statements)

References 48 publications

Supporting

Mentioning

135

Contrasting

Order By: Relevance

“…1) build on previous understanding of contactcontrolled transistors [3], [4] and are structurally similar to that of devices proposed for selecting carrier type in ambipolar semiconductors and/or eliminating the effect of contact barriers [5], [6]. Indeed, similar architectures have recently been proposed for reconfigurable logic using 2D materials [7], [8].…”

Section: Introductionmentioning

confidence: 84%

22.2: Invited Paper: Opportunities for Multimodal Thin‐Film Transistors in Displays and Beyond

Bestelink

Sagazan

Sporea

2021

Symp Digest of Tech Papers

View full text Add to dashboard Cite

Multimodal transistors (MMTs) build on previous understanding of contact‐controlled transistors. Additionally, they allow precise control of the charge injected, distinct from controlling the state of conduction of the semiconductor channel. This approach leads to interesting functionality, of benefit to displays and other large area electronic circuits. Here, we summarize the construction and functionality of the MMT and outline potential applications.

show abstract

Section: Introductionmentioning

confidence: 84%

22.2: Invited Paper: Opportunities for Multimodal Thin‐Film Transistors in Displays and Beyond

Bestelink

Sagazan

Sporea

2021

Symp Digest of Tech Papers

View full text Add to dashboard Cite

show abstract

“…[ 3–6 ] There have been extensive efforts focusing on the designing of device prototypes to realize the integration of multiple functions in a single device unit. The newly emerged nanomaterials, including 1D nanotubes [ 7–10 ] and 2D materials, [ 11–27 ] owing to the intrinsic advantage of easy electrostatic control in deeply scaled nanotransistors, show great potential in developing new‐principle devices with smaller size, higher information processing ability, and more functions. For example, through connecting MoS 2 /black phosphorus (BP) heterojunction with BP field‐effect transistor (FET) in series, Wu and co‐workers realized novel adjustable ternary logic devices, where the intermediate state can be adjusted by changing the length of BP in the heterojunction region.…”

Section: Introductionmentioning

confidence: 99%

Double‐Gate MoS₂ Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Sun

Zhu

et al. 2021

Advanced Materials

View full text Add to dashboard Cite

Multifunctional reconfigurable devices, with higher information capacity, smaller size, and more functions, are urgently needed and draw most attention in frontiers in information technology. 2D semiconductors, ascribing to ultrathin body and easy electrostatic control, show great potential in developing reconfigurable functional units. This work proposes a novel double‐gate field‐effect transistor architecture with equal top and bottom gate (TG and BG) and realizes flexible optimization of the subthreshold swing (SS) and threshold voltage (VTH). While the TG and BG are used simultaneously, as a single gate to drive the transistor, ultralow average SS value of 65.5 mV dec−1 can be obtained in a large current range over 104, enabling the application in high gain inverter. While one gate is used to initialize the channel doping, full logic swing inverter circuit with high noise margin (over 90%) is demonstrated. Such device prototype is further extended for designing reconfigurable logic applications and can be dynamically switched and well maintained between binary and ternary logics. This study provides important concept and device prototype for future multifunctional logic applications.

show abstract

“…23 Switching elements such as the G-Cap are the basis of logic families to establish transistor-transistor or diode-transistor logic gates (AND, OR, NAND, NOR). 6,[24][25][26] However, a key requirement for assembling active iontronic elements such as CAPode and G-Cap into more complex circuits, e.g. networks of iontronic elements, is an in-plane realization suitable for in-plane interconnection into iontronic circuits and the respective technologies for manufacturing.…”

Section: Introductionmentioning

confidence: 99%

Monolithic in-plane integration of gate-modulated switchable supercapacitors (ipG‐Cap)

Bräuniger

Lochmann

Gellrich

et al. 2021

Preprint

View full text Add to dashboard Cite

Monolithic integration of iontronic devices is a key challenge for future miniaturization and system integration, in particular the interconnection of multiple functional elements as required for ion computing. The G-Cap, a novel iontronic element, is a switchable supercapacitor with gating characteristics comparable to transistors in electronic circuits, but switching relies on ionic currents and ion electroadsorption. We report here the first monolithic in-plane G-Cap integration through 3D-inkjet printing of non-toxic nanoporous carbon precursors. The printed G-Cap has a three-electrode architecture integrating a symmetric "working" micro-supercapacitor (W-Cap) and a third "gate" electrode (G-electrode) that reversibly depletes/injects electrolyte ions into the system, effectively controlling the "working" capacitance. The printed precursor structures were directly converted into nanoporous carbon materials with a specific surface area of 544 m2 g−1. The symmetric W‐Cap operates with a proton conducting hydrogel electrolyte based on PVA/H2SO4 and shows a high capacitance (1.3 mF cm−2) that can be switched “on” and “off” by applying a DC bias potential (- 1.0 V) at the G-electrode. This effectively suppresses AC electroadsorption in the nanoporous carbon electrodes of the W-Cap, resulting in a high capacitance drop from an "on" to an "off" state. Printing offers far-reaching freedom of design for varying the device structure achieving superior device performance. The new monolithic structures achieve high rate performance, reversible on-off switching with an off-value as low as 0.5 % surpassing values reported so far. Establishing technologies and device architectures for functional ionic electroadsorption devices is crucial for diverse fields ranging from microelectronics and iontronics to biointerfacing and neuromodulation.

show abstract

Two-dimensional transistors with reconfigurable polarities for secure circuits

Cited by 133 publications

References 48 publications

22.2: Invited Paper: Opportunities for Multimodal Thin‐Film Transistors in Displays and Beyond

22.2: Invited Paper: Opportunities for Multimodal Thin‐Film Transistors in Displays and Beyond

Double‐Gate MoS₂ Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Monolithic in-plane integration of gate-modulated switchable supercapacitors (ipG‐Cap)

Contact Info

Product

Resources

About

Two-dimensional transistors with reconfigurable polarities for secure circuits

Cited by 133 publications

References 48 publications

22.2: Invited Paper: Opportunities for Multimodal Thin‐Film Transistors in Displays and Beyond

22.2: Invited Paper: Opportunities for Multimodal Thin‐Film Transistors in Displays and Beyond

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Monolithic in-plane integration of gate-modulated switchable supercapacitors (ipG‐Cap)

Contact Info

Product

Resources

About

Double‐Gate MoS₂ Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits