Two‐Dimensional Wafer‐Scale Chemical Mechanical Planarization Models Based on Lubrication Theory and Mass Transport

Sellamanickam, Sundararajan; Thakurta, Dipto G.; Schwendeman, Donald W.; Murarka, S. P.; Gill, William N.

doi:10.1149/1.1391678

Cited by 134 publications

(103 citation statements)

References 16 publications

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“…Although the possible existence of both the lubrication regime and the contact regime in chemical mechanical planarization was acknowledged by Thakurta et al [48] in 2000, in a series of later papers [49,50,51] the group presented models for chemical mechanical planarization principally focused on the hydrodynamic lubrication regime. The work assumed that the applied pressure was low enough and the relative velocity high enough to ensure that there was hydrodynamic fluid film behavior.…”

Section: 31mentioning

confidence: 99%

“…Both two-dimensional and three-dimensional models were presented. Several studies also included a mass transport model to take into account chemical reaction at the wafer surface for the polishing of copper [49,51]. Other work which considered both the fluid and chemical aspects of chemical mechanical polishing includes that by Subramanian et al [52] who modeled CMP of copper using a repeated cell model.…”

Section: 31mentioning

confidence: 99%

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Material Removal Mechanisms in Lapping and Polishing

et al. 2003

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Section: 31mentioning

confidence: 99%

Section: 31mentioning

confidence: 99%

Material Removal Mechanisms in Lapping and Polishing

et al. 2003

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“…pad conditioning, slurry type and pad surface asperity. [9][10] The wafer level fluctuation leads to pressure distribution fluctuation. That means that actual removal profile depends on not only static pressure distribution but also dynamic and lubrication condition.…”

Section: Discussionmentioning

confidence: 99%

“…whereR is given by,R = 1 n n k=1 R k [8] According to the evaluation between pressure non-uniformity and removal non-uniformity, it was verified that the pressure integration non-uniformity and the actual removal non-uniformity have a strong correlation with a correlation coefficient of 0.99. The result supports that polishing pressure is a dominant factor to determine removal rate strongly.…”

Section: Correlation Between Pressure Integration Profile and Actualmentioning

confidence: 97%

Pressure Distribution Control on Surface Conformable Polishing in Chemical Mechanical Planarization

Fujita

Watanabe

2015

ECS J. Solid State Sci. Technol.

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An original polishing mechanism with a triple layer pad was developed as a surface conformable polishing mechanism in CMP (Chemical Mechanical Planarization). According to the polishing mechanism, removal profile can be controlled by base plate curvature through an assist pad made of elastic material. A pad system supported by an envelope plane composed of five wafers contributes to make a wafer level paralleled to a pad level relatively during polishing. As the result, a static pressure distribution can be transferred precisely to a dynamic polishing profile regardless of strong shearing force by polishing. In order to verify the polishing removal controllability, an original pressure distribution analysis was developed by an actual pressure distribution measurement around an entire pad surface. The analyzed pressure distribution profile was in good agreement with the actual polishing profile. From the result that the static pressure profile can be transferred to the polishing profile precisely, it was verified that the polishing mechanism is reasonable for surface conformable polishing system in CMP.

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“…With the development of high-performance electrical products, CMF has to be improved to meet even more stringent requirements, and even will face new challenges. The above factors serve as incentives to deepen the basic understanding of material removal mechanisms for super-precision surface finishing [2]. However, to date, the mechanism of material removal from the wafer is still unclear and ambiguous because the difficultly in extracting information about basic mechanisms of CMF can hardly be overcomerS].…”

mentioning

confidence: 99%

Progress in material removal mechanisms of surface polishing with ultra precision

Zhang

et al. 2004

Chin. Sci. Bull.

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Chemical mechanical polishing (CMP) process is commonly regarded as the best method for achieving global planarization in the field of surface finishing with ultra-precision. The development of investigation on material removal mechanisms for different materials used in computer hard disk and ultra-large scale integration fabrication are reviewed here. The mechanisms underlying the interaction between the abrasive particles and polished surfaces during CMP are addressed, and some ways to investigate the polishing mechanisms are presented.Keywords: CMP, material removal mechanism, wear, ULSI, computer hard disk. DOl: lO.1360/04we0035According to the International Technology Roadmap for Semiconductors, the chips with a wafer diameter of 450 mm and a feature size of 0.05 flill by the 2011 will serve to decrease manufacturing costS [I]. The corresponding wafer surface quality is expected to meet the unprecedented requirement. For example, surfaces and subsurfaces of wafers must be damage-free after being polished. And in computer hard disk manufacturing, the requirement for surface quality is higher and higher with increasing storage density. For instance, if the hard disk is expected to achieve a storage density larger than 500-1000 Gb/in 2 , the micro-waviness (Wa) and the roughness (Ra) of the hard disk surface must be less than 0.1 and 0.05 urn respectively. These requirements are close to the limits of the present manufacturing technology. The technique of planarization has become the key factor to meet such requirements. Chemical mechanical polishing (CMP) is commonly recognized to be the best method of achieving global planarization in super-precision surface fabrication. It has been a key technology for facilitating the development of high density multilevel interconnected circuit[3-5] and computer magnetic head and hard disk manufacturing [6,7]. With the development of high-performance electrical products, CMF has to be improved to meet even more stringent requirements, and even will face new challenges. The above factors serve as incentives to deepen the basic understanding of material removal mechanisms for super-precision surface finishing [2]. However, to date, the mechanism of material removal from the wafer is still unclear and ambiguous because the difficultly in extracting information about basic mechanisms of CMF can hardly be overcomerS]. CMF's widespread applications have exceeded the growth of the scientific understanding. And therefore, a study of the microscopic material removal mechanism during CMF will help not only to reveal new polishing behaviors and mechanisms followed under the condition of extreme manufacturing but also to explore new principles and methods of extreme manufacturing in microelectronics industries. This paper presents a general review on the material removal mechanisms during CMF in computer magnetic hard disk manufacture and ultra-large scale integration fabrication, such as silicon, dielectric layer and metal layers. The mechanisms underlying the interaction between the...

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Two‐Dimensional Wafer‐Scale Chemical Mechanical Planarization Models Based on Lubrication Theory and Mass Transport

Cited by 134 publications

References 16 publications

Material Removal Mechanisms in Lapping and Polishing

Material Removal Mechanisms in Lapping and Polishing

Pressure Distribution Control on Surface Conformable Polishing in Chemical Mechanical Planarization

Progress in material removal mechanisms of surface polishing with ultra precision

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