Two distinctive regimes in the charge transport of a magnetic topological ultra thin film

Abstract

The effect of the magnetic impurities on the charge transport in a magnetic topological ultra-thin film (MTF) is analytically investigated by applying the semi-classical Boltzmann framework through a modified relaxation-time approximation. Our results for the relaxation time of electrons as well as the charge conductivity of the system exhibit two distinct regimes of transport. We show that the generated charge current in a MTF is always dissipative and anisotropic when both conduction bands are involved in the charge transport. The magnetic impurities induce a chirality selection rule for the transitions of electrons which can be altered by changing the orientation of the magnetic impurities. On the other hand, when a single conduction band participates in the charge transport, the resistivity is isotropic and can be entirely suppressed due to the corresponding chirality selection rule. Our findings propose a method to determine an onset thickness at which a crossover from a three-dimensional magnetic topological insulator to a (two-dimensional) MTF occurs.

Charge transport in magnetic topological ultra-thin films: the effect of structural inversion asymmetry

“…We show that when only a single conduction subband contributes to the charge transport a dissipationless charge current can exist. This dissipationless charge current has also been reported for a free-standing MTF [44]. This effect occurs when the current generating external electric field is parallel to fully in-plane oriented magnetic impurities.…”

Synthesis of the Candidate Topological Compound Ni3Pb2

“…1−5 Topologically nontrivial materials host band structures that enforce transport along specific paths, for example through spin-momentum locking and surface currents. 6−8 This phenomenon offers the potential to protect electron transport from sources of noise 9,10 with spintronic 11,12 and fault-tolerant quantum computing applications. 13−16 Recent computational studies demonstrate that topologically nontrivial classifiers are shared by ∼30% of known materials.…”

“…Over the past decade, the field of topological materials grew at an explosive pace, fundamentally reshaping our depiction of solid-state systems. − Topologically nontrivial materials host band structures that enforce transport along specific paths, for example through spin-momentum locking and surface currents. − This phenomenon offers the potential to protect electron transport from sources of noise , with spintronic , and fault-tolerant quantum computing applications. − Recent computational studies demonstrate that topologically nontrivial classifiers are shared by ∼30% of known materials . However, progressing from the classification of band structures to the application of useful transport properties, dependent on the overall electronic structure of each system, remains a key hurdle in the field.…”