Two high dynamic range mmW amplifiers in SMT package with ESD protection

This paper presents the design and performance of two new quad flat non-leaded (QFN) packaged high power amplifiers operating at Ka-Band. The packaged amplifiers are fully compatible with conventional SMD assembly processes which significantly reduce assembly cost and complexity. The QFNs themselves are standard off-the-shelf low-cost plastic aircavity packages. Matching networks that were designed to compensate packaging and wire-bond related parasitics will be presented. The 1-Watt 4x4mm 2 QFN packaged amplifier demonstrates min. +30 dBm CW saturated output power with power added efficiency (PAE) of 26%, and min. +20dB small signal gain from 28 to 31 GHz. The 4-Watt 5x5mm 2 QFN packaged amplifier exhibits min. +35 dBm CW saturated output power with at least 20dB small signal gain from 28 to 31 GHz. Saturated output power of +36dBm was achieved from 29 to 31 GHz with PAE of 23%. Thermal analysis of the channel temperatures will also be presented. To authors' knowledge, these amplifiers are the first Ka-band packaged amplifiers to produce 1-Watt and 4-Watt saturated output power using standard plastic QFNs with the smallest sizes.

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Wafer scale package construction and usage for RF through millimeter wave applications

Morkner

2009

2009 European Microwave Conference (EuMC)

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Two high dynamic range mmW amplifiers in SMT package with ESD protection

Cited by 4 publications

References 1 publication

A Miniaturized Wafer-Scale Package Demonstrated with Three Enhancement Mode Amplifiers

A Miniaturized Wafer-Scale Package Demonstrated with Three Enhancement Mode Amplifiers

Compact low-cost 1-Watt and 4-Watt quad flat non-leaded (QFN) packaged Ka-Band high power amplifiers

Wafer scale package construction and usage for RF through millimeter wave applications

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