Two-photon absorption in semiconductors with picosecond laser pulses

Bechtel, James H.; Smith, W. L.

doi:10.1103/physrevb.13.3515

Cited by 209 publications

(54 citation statements)

References 24 publications

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“…1(e)] was used (also see Supplemental Material [36]). phonon is only 1 order of magnitude smaller than that of strong optical two-photon absorbers such as GaAs or CdTe [46]. Moreover, THz SFE will potentially extend established, highly sensitive infrared vibrational spectroscopies to infrared-forbidden yet Raman-active modes.…”

Section: Prl 119 127402 (2017) P H Y S I C a L R E V I E W L E T T Ementioning

confidence: 99%

Terahertz Sum-Frequency Excitation of a Raman-Active Phonon

et al. 2017

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In stimulated Raman scattering, two incident optical waves induce a force oscillating at the difference of the two light frequencies. This process has enabled important applications such as the excitation and coherent control of phonons and magnons by femtosecond laser pulses. Here, we experimentally and theoretically demonstrate the so far neglected up-conversion counterpart of this process: THz sumfrequency excitation of a Raman-active phonon mode, which is tantamount to two-photon absorption by an optical transition between two adjacent vibrational levels. Coherent control of an optical lattice vibration of diamond is achieved by an intense terahertz pulse whose spectrum is centered at half the phonon frequency of 40 THz. Remarkably, the carrier-envelope phase of the THz pulse is directly transferred into the phase of the lattice vibration. New prospects in general infrared spectroscopy, action spectroscopy, and lattice trajectory control in the electronic ground state emerge.

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Section: Prl 119 127402 (2017) P H Y S I C a L R E V I E W L E T T Ementioning

confidence: 99%

Terahertz Sum-Frequency Excitation of a Raman-Active Phonon

et al. 2017

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“…In ZnSe, two-photon absorption is observed at 532 nm as the incident photon energy is lower than the direct band gap energy Εg but greater than Εg/2 [7]. The linear absorption is due, among other reasons, to the impurity levels in the band gap.…”

Section: Nonlinear Transmissionmentioning

confidence: 93%

Influence of Free Carrier Concentration on Nonlinear Absorption of n-Type ZnSe Crystals

et al. 1996

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The dependence of nonlinear absorption at 532 nm of n-type ZnSe crystals upon annealing temperature and free carrier concentration is reported. The nonlinear optical absorption as well as the efficiency of degenerate four wave mixing of ZnSe are investigated. It is found that the magnitude of the nonlinear absorption decreases with an increase in the electron concentration. The nonlinear refractive index change is estimated:

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“…Figure 7.1(c). The transition rate of the TPA process is expressed by the second order perturbation theory as [27,63]:…”

Section: Exciton-phonon Couplingmentioning

confidence: 99%

Excitonic Effects and Energy Upconversion in Bulk and Nanostructured ZnO

Chen¹

2013

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ii Cover figure (front): 5K time-resolved photoluminescence (TRPL) of ZnO bulk single crystal from Tokyo Denpa Co. (top-right). The TRPL image was measured in a forward-transmission geometry i.e. laser excitation at back side and PL detection from front side. Also shown is an illustrative two-dimensional hexagonal lattice (bottom-left) with typical crystal defects: substitutional impurity, interstitial and vacancy.Cover figure (back): 5K three-dimensional TRPL image of ZnO bulk single crystal from Tokyo Denpa Co.. The TRPL images were recorded in two geometries: (1) back-scattering as marked by arrow 'a' and (2) forwardtransmission as marked by arrow 'b'.Copyright ©2014 Shula Chen, unless otherwise stated. Excitonic Effects and Energy Upconversion in Bulk and Nanostructured Linköping Studies in Science and Technology Dissertation No. 1560 Printed by LiU-Tryck, Linköping, Sweden, 2014 iii Abstract Zinc Oxide (ZnO), a II-VI wurtzite semiconductor, has been drawing enormous research interest for decades as an electronic material for numerous applications. It has a wide and direct band gap of 3.37eV and a large exciton binding energy of 60 meV that leads to intense free exciton (FX) emission at room temperature. As a result, ZnO is currently considered among the key materials for UV light emitting devices with tailored dimensionality and solid-state white lighting. Full exploration of ZnO for various applications requires detailed knowledge of its fundamental and material-related properties, which remains incomplete. The research work summarized in this thesis addresses a selection of open issues on optical properties of ZnO based on (but not limited to) detailed time-resolved photoluminescence (PL) and magneto-optical studies of various excitonic transitions as specified below.Paper 1 and 2 analyze recombination dynamics of FX and donor bound excitons (DX) in bulk and tetrapod ZnO with the aim to evaluate contributions of radiative and non-radiative carrier recombination processes in the total carrier lifetime. We show that changes in relative contributions of these processes in "bulk" and near-surface areas are responsible for bi-exponential exciton decays typically observed in these materials. The radiative FX lifetime is found to be relatively long, i.e. >1 ns at 77 K and >14 ns at room temperature. In the case of DX, the radiative lifetime depends on exciton localization. Radiative recombination is concluded to dominate the exciton dynamics in "bulk regions" of high-quality materials. It leads to appearance of a slow component in the decays of no-phonon (NP) FX and DX lines, which also determines the dynamics of the longitudinal optical (LO) phonon-assisted and two-electronsatellite DX transitions. On the other hand, the fast component of the exciton decays is argued to be a result of surface recombination.Paper 3 evaluates exciton-phonon coupling in bulk and tetrapod ZnO. It is found that, in contrast to bulk ZnO, the NP FX emission in ZnO tetrapods is weak as compared with the LO-phonon-assisted transi...

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Two-photon absorption in semiconductors with picosecond laser pulses

Cited by 209 publications

References 24 publications

Terahertz Sum-Frequency Excitation of a Raman-Active Phonon

Terahertz Sum-Frequency Excitation of a Raman-Active Phonon

Influence of Free Carrier Concentration on Nonlinear Absorption of n-Type ZnSe Crystals

Excitonic Effects and Energy Upconversion in Bulk and Nanostructured ZnO

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