Two-Step Electrochemical Mechanical Polishing of Pure Copper

Wu, Di; Kang, Renke; Niu, Lin; Pan, Bo; Liu, Zuotao; Guo, Jiang

doi:10.1149/2.0091911jss

Cited by 6 publications

(4 citation statements)

References 15 publications

(23 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…10 Therefore, the suppression of the surface defects of fused silica will promote the development of the laser system toward higher power. Chemical mechanical polishing (CMP) technology is the only super smooth surface processing technology that can achieve global planarization and nanoscale roughness by far, [11][12][13][14] which is applied to aerospace, precision optics and information technology field, and so on. 15 Nevertheless, CMP is affected by numerous parameters such as the type of abrasive, pressure on the workpiece as well as polishing pad, 16 and the morphology, size, physical, and chemical properties of abrasive are considered to be one of the most crucial factors affecting the surface quality.…”

Section: Introductionmentioning

confidence: 99%

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO₂

Zhang

Jia

et al. 2022

J Am Ceram Soc.

View full text Add to dashboard Cite

Surface quality of fused silica, particularly surface defect and surface roughness, is a key factor affecting the performance of high-power laser and short-wave optical instrument, and so on. Herein, the super smooth surface of fused silica with roughness of sub-angstrom level and exceedingly few submicron defects was achieved by using ultrafine nano-CeO 2 with primary particle size less than 4 nm, low secondary particle agglomeration strength, and high Ce 3+ concentration. Furthermore, CeO 2 involve in polishing process in the form of primary particle was certified by experiment. Moreover, the cause for the generation of submicron defects on fused silica surface was investigated for the first time from the perspective of secondary particle agglomeration strength of CeO 2 . The concentration of Ce 3+ in CeO 2 was characterized by the redshift of the band-gap energy, and the analysis of material removal rate (MRR) and contact angle of polished fused silica shows that Ce 3+ enhances MRR through increasing the silanol group on fused silica.

show abstract

Section: Introductionmentioning

confidence: 99%

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO₂

Zhang

Jia

et al. 2022

J Am Ceram Soc.

View full text Add to dashboard Cite

show abstract

“…Thus, ECMP is considered to be one of the most prospective surface planarization technologies to replace CMP when the size of IC continues to shrink due to its characteristics of good control, high quality of polished surface and low down force applied during polishing. 4,[20][21][22] In the process of cobalt polishing, in order to improve the MRR, oxidizing agents and complexing agents are generally added to the polishing fluid. The commonly used oxidizing agent is H 2 O 2 , and the complexing agents include Benzotriazole (BTA), glycine, citric acid and so on.…”

mentioning

confidence: 99%

Effects of Electrochemical Mechanical Polishing on the Polishing Efficiency and Quality of Co with H₂O₂ and BTA under Alkaline Conditions

Xie¹,

Zhong²,

Xu³

2021

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

With the development of technology nodes below 5 nm, cobalt has attracted extensive attention as an interconnection metal to replace Cu in the next generation of interconnection technology. Here, the appropriate concentrations of colloidal silica, H 2 O 2 , and BTA in the polishing solution were determined by static electrochemical measurement and electrochemical mechanical polishing technique. The results showed that the dynamic material removal rate of cobalt could be greatly improved after the addition of the selected solution. X-ray photoelectron spectroscopy was used to explore the reaction process and material generation in the polishing process. Co(Ⅱ)-BTA complex was found to be generated in the reaction process and adsorbed on the surface of cobalt, and it could be removed under a small mechanical force. Finally, the surface roughness of Co under different polishing time was measured by atomic force microscopy. The roughness of cobalt surface was Ra 1.35 nm polished for 10 min, and Ra was 0.418 nm after polishing for 120 min.

show abstract

“…Moreover, both the clamping force and the polishing pressure can cause the deformation of a flexible workpiece, which makes it difficult to achieve high surface form accuracy. [8][9][10][11] Therefore, greater attention has been paid to stress-free methods to avoid the aforementioned problems. In 1935, Jacquet 12 proposed the electrochemical polishing (ECP) of Cu based on the electrochemical dissolution theory.…”

mentioning

confidence: 99%

Preparation of Flat and Smooth Copper Surface by Jet Electrochemical Machining and Electrochemical Polishing

Wang

Yan

Zhou

et al. 2020

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

Ultra-flat and ultra-smooth copper (Cu) surfaces are widely used as optical mirrors, heat sinks, and substrates for functional material growth. Traditional polishing methods that rely on abrasive particles are easy to induce mechanical defects such as abrasives embedding and scratches on surfaces. A new stress-free machining process is proposed in this research to fabricate an ultra-flat and ultra-smooth Cu surface by combining jet electrochemical machining (Jet-ECM) and electrochemical polishing (ECP). With the accurate manipulating of material removal rate (MRR) and planning of nozzle trajectory, an ultra-flat surface can be obtained efficiently in the Jet-ECM process. The surface roughness of the workpiece can be further improved by ECP with the same electrolyte used in the Jet-ECM process. The results show that the surface peak-to-valley (PV) value which indicated the surface form error of the Cu surface was reduced from 4.4 μm to 1.7 μm and the surface roughness Sa was reduced from 70.3 nm to 13.5 nm. The combination of Jet-ECM and ECP which share the same electrolyte and apparatus can improve the surface flatness and roughness significantly. This study improves the machining accuracy of stress-free machining methods and has great implications for the further understanding of the electrochemical removal mechanism.

show abstract

Two-Step Electrochemical Mechanical Polishing of Pure Copper

Cited by 6 publications

References 15 publications

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO₂

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO₂

Effects of Electrochemical Mechanical Polishing on the Polishing Efficiency and Quality of Co with H₂O₂ and BTA under Alkaline Conditions

Preparation of Flat and Smooth Copper Surface by Jet Electrochemical Machining and Electrochemical Polishing

Contact Info

Product

Resources

About

Two-Step Electrochemical Mechanical Polishing of Pure Copper

Cited by 6 publications

References 15 publications

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO2

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO2

Effects of Electrochemical Mechanical Polishing on the Polishing Efficiency and Quality of Co with H2O2 and BTA under Alkaline Conditions

Preparation of Flat and Smooth Copper Surface by Jet Electrochemical Machining and Electrochemical Polishing

Contact Info

Product

Resources

About

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO₂

Fused silica with sub‐angstrom roughness and minimal surface defects polished by ultrafine nano‐CeO₂

Effects of Electrochemical Mechanical Polishing on the Polishing Efficiency and Quality of Co with H₂O₂ and BTA under Alkaline Conditions