Two step growth phenomena of molybdenum disulfide–tungsten disulfide heterostructures

Ionescu, Robert; Ruiz, Isaac; Favors, Zach; Campbell, Brennan; Neupane, Mahesh R.; Wickramaratne, Darshana; Ahmed, Kazi; Liu, Chueh; Abrahamian, Narek; Lake, Roger K.; Ozkan, Mihri; Ozkan, Cengiz S.

doi:10.1039/c5cc02837j

Cited by 21 publications

(11 citation statements)

References 46 publications

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“…Chalcogenation of TM precursor films can provide scalability and patternability of the resulting vertical heterostructures. [171,172,180] Through a two-step individual chalcogenation process, Xue et al obtained periodic arrays of MoS 2 /WS 2 vertical heterostructures by preventing the phase mixing of TMDs effectively in an unpredicted manner. [172]…”

Section: Tmd/tmd Heterostructures Have Attracted Much Attention Because the Stacking Of Differentmentioning

confidence: 99%

Recent Developments in Controlled Vapor‐Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

et al. 2019

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An overview of recent developments in controlled vapor-phase growth of two-dimensional transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various This article is protected by copyright. All rights reserved. growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te) 2 atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed.Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macro-scale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field.

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Section: Tmd/tmd Heterostructures Have Attracted Much Attention Because the Stacking Of Differentmentioning

confidence: 99%

Recent Developments in Controlled Vapor‐Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

et al. 2019

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“…There have been many attempts to produce MoS2-based vertical heterostructures via two-step CVD processes, in which two or more materials are grown on a substrate step by step. The first demonstrations of atomically-thin vertically-stacked MoS2/WS2 heterostructures were achieved by deposition and sulfurization methods with atomically sharp interfaces [69][70][71]. Until the in-situ vdW epitaxial growth of one type of TMDs on another has been extensively developed, further study on the interlayer coupling in the epitaxially-grown bilayer TMD heterostructure is highly promoted.…”

Section: Epitaxial Growth Of Mos 2 -Based Tmd Heterostructuresmentioning

confidence: 99%

Monolayer MoS2 epitaxy

Zheng

Wang

et al. 2020

Nano Res.

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As an emerging two-dimensional (2D) semiconductor material, monolayer MoS 2 has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS 2 with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS 2 monolayers. Here, we review the epitaxial growth of monolayer MoS 2 on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology.

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“…[124] For the growth of WSe , by many other groups via different CVD methods. [126][127][128][129][130][131][132][133][134][135][136][137][138] As an interesting example, Palacios, Kong and co-workers recently reported a general CVD method to grow several kinds of lateral heteronanostructures, including low lattice-mismatched WS 2 -MoS 2 and large lattice-mismatched graphene-MoS 2 and hexagonal boron nitride (h-BN)-MoS 2 , by using aromatic molecules as seeds to facilitate the selective growth of 2D nanosheet on the substrate or on another pre-deposited 2D nanosheet. [139] It is noted that all the aforementioned TMD lateral heteronanostructures have an alloy-like structure at the interface regions.…”

Section: D Metal Chalcogenide Heteronanostructuresmentioning

confidence: 99%

Ultrathin Two‐Dimensional Multinary Layered Metal Chalcogenide Nanomaterials

2017

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Ultrathin two-dimensional (2D) layered transition metal dichalcogenides (TMDs), such as MoS , WS , TiS , TaS , ReS , MoSe and WSe , have attracted considerable attention over the past six years owing to their unique properties and great potential in a wide range of applications. Aiming to achieve tunable properties and optimal application performances, great effort is devoted to the exploration of 2D multinary layered metal chalcogenide nanomaterials, which include ternary metal chalcogenides with well-defined crystal structures, alloyed TMDs, heteroatom-doped TMDs and 2D metal chalcogenide heteronanostructures. These novel 2D multinary layered metal chalcogenide nanomaterials exhibit some unique properties compared to 2D binary TMD counterparts, thus holding great promise in various potential applications including electronics/optoelectronics, catalysis, sensors, biomedicine, and energy storage and conversion with enhanced performances. This article focuses on the state-of-art progress on the preparation, characterization and applications of ultrathin 2D multinary layered metal chalcogenide nanomaterials.

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Two step growth phenomena of molybdenum disulfide–tungsten disulfide heterostructures

Cited by 21 publications

References 46 publications

Recent Developments in Controlled Vapor‐Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

Recent Developments in Controlled Vapor‐Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

Monolayer MoS2 epitaxy

Ultrathin Two‐Dimensional Multinary Layered Metal Chalcogenide Nanomaterials

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