Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer

Chen, H; Cai, Lihong; Bao, C. L.; Li, J.H; Huang, Qi; Zhou, Jianping

doi:10.1016/s0022-0248(99)00433-9

Cited by 10 publications

(5 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, because InSb QDs need to be grown within an InAs matrix, to deposit these QDs on GaAs substrates one must first accommodate the large lattice mismatch between InAs and GaAs ( a/a 0 = 7.2%). Depending on the growth conditions, during the initial stages of InAs deposition on GaAs either self-assembled islands or 2D films can be formed [11,12]. Experimental work has shown that during MBE growth the strain becomes fully relaxed after 7 nm of InAs has been deposited under indium rich conditions [13].…”

Section: Introductionmentioning

confidence: 99%

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

Zhuang

Marshall

et al. 2014

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements. Photoluminescence (PL) originating from the InSb QDs was observed from each of the samples and was found to be comparable to the PL of InSb QDs grown onto homo-epitaxially deposited InAs. The 4 K PL intensity and linewidth of InSb QDs grown onto a 3 μm thick InAs buffer layer directly deposited onto GaAs proved to be superior to that from QDs grown onto an InAs MBL using either AlSb or GaSb interlayers. Light-emitting diode structures containing ten layers of InSb QD in the active region were subsequently fabricated and electroluminescence from the QDs was obtained in the mid-infrared spectral range up to 180 K. This is the first step towards obtaining mid-infrared InSb QD light sources on GaAs substrates.

show abstract

Section: Introductionmentioning

confidence: 99%

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

Zhuang

Marshall

et al. 2014

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…To overcome such problems, several technical methods were suggested. A two step method using InAs prelayer grown under In rich environment [4], or a graded buffer layer (InGaAs, InAlAs, GaInAlAs) [5,6], or a Te covered GaAs surface [7], have showed a clear improvement of the physical properties of active InAs layer. Substrate orientation and growth parameters were found to change the energy of surface reconstructions, the kinetics of adsorption, migration and desorption of adatoms [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

Mzoughi¹,

Fitouri²,

Moussa³

et al. 2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…Moreover, the closely spaced 60 dislocation pairs may not vanish even by surface treatment 12 or post-annealing. 13 However, also exhibiting a large mismatch, InAs has been shown to behave differently upon growth on GaAs or GaP: both coherent strain (misfit dislocation free) 14,15 and plastic relaxation 16,17 have been reported. Therefore, in the high mismatched systems, the configurations and formation mechanisms of the interface misfit dislocations are complex and may need further investigation.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the anisotropic strain relaxation in GaSb islands on GaP

Wang

Ruterana

Lei

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

The strain relaxation at the initial stages of highly mismatched (11.8%) GaSb grown on a GaP substrate following a Ga-rich surface treatment by molecular beam epitaxy has been investigated. High resolution transmission electron microscopy and moire ´fringe analysis were used to determine the relaxation state in these GaSb islands in the [110] and [1-10] directions. The measurements revealed an anisotropic strain relaxation in these two directions; there is a higher misfit strain relaxation along the [110] direction where the islands are elongated, which is in agreement with a higher density of misfit dislocations. By combining molecular dynamics simulations and TEM results, the anisotropy in the strain relaxation is shown to be related to the asymmetry in the formation of interface misfit dislocations. The P-core glide set 60 dislocations (a type) and the Ga-core shuffle set Lomer dislocations serve as the primary misfit dislocation which contributes to the strain relaxation in the (1-10) interface, and the Ga-core glide set 60 dislocations (b type) and the P-core shuffle set Lomer dislocations for the (110) interface, respectively. The lower formation energy and higher glide velocity of the P-core glide set 60 dislocations (a type) result in a higher line density and more uniform periodical distribution of the misfit dislocation in the (1-10) interface. The higher fraction of Lomer dislocations, which is related to the dislocation configuration stability and surface treatment, promotes a better strain relief in the (1-10) interface, with a corresponding elongation of islands in the [110] direction. V

show abstract

Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer

Cited by 10 publications

References 7 publications

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

Investigation of the anisotropic strain relaxation in GaSb islands on GaP

Contact Info

Product

Resources

About