2011
DOI: 10.1016/j.ssi.2010.06.026
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Two-step sintering of ZnO varistors

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Cited by 34 publications
(3 citation statements)
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“…Mazaheri et al [22] confirmed the triple-point drag mechanism for controlled grain growth at the second-step sintering proposed by Chen and Wang [15] by using TEM image of two-step sintered ZnO compacts. ZnO sintered via TSS exhibited excellent I-V characteristics [16,74,76]. ZnO varistors sintered via TSS exhibited higher breakdown field of 6-8 kVmm −1 and nonlinear coefficient of over 270 due to fine grain size and high concentration of ZnO-ZnO grain contacts [16].…”
Section: Sintering Of Zinc Oxidementioning
confidence: 99%
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“…Mazaheri et al [22] confirmed the triple-point drag mechanism for controlled grain growth at the second-step sintering proposed by Chen and Wang [15] by using TEM image of two-step sintered ZnO compacts. ZnO sintered via TSS exhibited excellent I-V characteristics [16,74,76]. ZnO varistors sintered via TSS exhibited higher breakdown field of 6-8 kVmm −1 and nonlinear coefficient of over 270 due to fine grain size and high concentration of ZnO-ZnO grain contacts [16].…”
Section: Sintering Of Zinc Oxidementioning
confidence: 99%
“…Electrical and optical properties of ZnO are mainly influenced by grain size. Grain growth of ZnO was successfully controlled using TSS [16,20,22,[74][75][76][77][78]. Zhang et al [20] and others [16] successfully sintered fully dense ZnO without grain growth at the final stage of sintering.…”
Section: Sintering Of Zinc Oxidementioning
confidence: 99%
“…It was reported that the high E 1mA of 800 V/mm was achieved by using nano powers with nonlinear coefficients (α) of approximately 20 [5,20]. Similarly, ZnO varistors, with a high α of 96, were prepared but followed by the high leakage current density (J L ) of 50 µA/cm 2 [21]. This is because a small grain size would increase the number of grain boundaries which would weaken the Schottky barrier and lower its barrier height, resulting in a low α and high J L .…”
Section: Introductionmentioning
confidence: 99%