Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires

Andzane, Jana; Petkov, Nikolay; Livshits, A. I.; Boland, John J.; Holmes, Justin D.; Erts, Donāts

doi:10.1021/nl8037807

Cited by 64 publications

(96 citation statements)

References 48 publications

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“…The I − V curve shown in Figure 3c shows a nonvolatile switching behavior with a threshold voltage of 46.5 V, which is higher than other reported Ge-based devices 21 and carbonnanotube-based electromechanical switches 20 . Upon switching to the 'on state', an Ohmic contact between the two Cu wires was observed with an overall contact resistance measured to bẽ 2.0 MΩ.…”

Section: Results and Discussion Manufacturing 3d Cu Microswitches On mentioning

confidence: 62%

“…Recently, Jang et al 8,20 demonstrated a vertical, three-terminal, carbon-nanotube-based electromechanical switch, in which multiwalled carbon nanotubes were catalytically grown and used as active elements. Similarly, free-standing germanium nanowires 21,22 and Mo 6 S 3 I 6 nanowires 23 were also used as switching elements. Although such microswitches provide many advantages compared with conventional semiconductor switches and are being studied in detail [24][25][26][27] , most of those fabrications are incompatible with typical microfabrication processes.…”

Section: Introductionmentioning

confidence: 99%

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Vertical, capacitive microelectromechanical switches produced via direct writing of copper wires

Guo

Chen

et al. 2016

Microsyst Nanoeng

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Three-dimensional (3D) direct writing based on the meniscus-confined electrodeposition of copper metal wires was used in this study to develop vertical capacitive microelectromechanical switches. Vertical microelectromechanical switches reduce the form factor and increase the area density of such devices in integrated circuits. We studied the electromechanical characteristics of such vertical switches by exploring the dependence of switching voltage on various device structures, particularly with regard to the length, wire diameter, and the distance between the two wires. A simple model was found to match the experimental measurements made in this study. We found that the electrodeposited copper microwires exhibit a good elastic modulus close to that of bulk copper. By optimizing the 3D structure of the electrodes, a volatile electromechanical switch with a sub-5 V switching voltage was demonstrated in a vertical microscale switch with a gap distance as small as 100 nm created with a pair of copper wires with diameters of~1 μm and heights of 25 μm. This study establishes an innovative approach to construct microelectromechanical systems with arbitrary 3D microwire structures for various applications, including the demonstrated volatile and nonvolatile microswitches.

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Section: Results and Discussion Manufacturing 3d Cu Microswitches On mentioning

confidence: 62%

Section: Introductionmentioning

confidence: 99%

Vertical, capacitive microelectromechanical switches produced via direct writing of copper wires

Guo

Chen

et al. 2016

Microsyst Nanoeng

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“…12 Recently, in-situ techniques were also used to characterize the electrical performance of Germanium (Ge) nanowires 13 and MWNTs 14 that were physically welded or connected to the ends of metallic probe tips for NEMS applications. In our work on 3D NEMS, we have examined the nanomechanical properties of the tubes using in situ techniques which are described in Section 3.2.…”

Section: Nems Switch Topologiesmentioning

confidence: 99%

Carbon-based nano-electro-mechanical systems

et al. 2010

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We provide an overview of our work where carbon-based nanostructures have been applied to twodimensional (2D) planar and three-dimensional (3D) vertically-oriented nano-electro-mechanical (NEM) switches. In the first configuration, laterally oriented single-walled nanotubes (SWNTs) synthesized using thermal chemical vapor deposition (CVD) were implemented for forming bridge-type 2D NEMS switches, where switching voltages were on the order of a few volts. In the second configuration, vertically oriented carbon nanofibers (CNFs) synthesized using plasma-enhanced (PE) CVD have been explored for their potential application in 3D NEMS. We have performed nanomechanical measurements on such vertically oriented tubes using nanoindentation to determine the mechanical properties of the CNFs. Electrostatic switching was demonstrated in the CNFs synthesized on refractory metallic nitride substrates, where a nanoprobe was used as the actuating electrode inside a scanning-electron-microscope. The switching voltages were determined to be in the tens of volts range and van der Waals interactions at these length scales appeared significant, suggesting such structures are promising for nonvolatile memory applications. A finite element model was also developed to determine a theoretical pull-in voltage which was compared to experimental results.

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“…Нитевидные наноструктуры Ge благодаря своим элек-трофизическим и оптическим свойствам имеют широкий спектр применения: в литий-ионных аккумуляторах [1], фотовольтаике [2], устройствах памяти [3], оптике [4], наноэлектромеханических системах [5]. Для формиро-вания полупроводниковых нанонитей Ge в основном используется газофазное осаждение [6].…”

Section: Introductionunclassified

Влияние температуры электролита на процесс катодного осаждения нитевидных наноструктур Ge из водных растворов на частицах In и Sn

Гаврилин¹,

Громов²,

Дронов³

et al. 2017

Физика И Техника Полупроводников

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Представлены результаты исследования роста нитевидных структур Ge из водных растворов электролитов при различных температурах с использованием массивов наночастиц In и Sn в качестве центров кристалли-зации. Температура процесса катодного осаждения Ge из водных растворов оказывает существенное влияние на строение слоя, осаждаемого на поверхность. При наличии частиц металлов в расплавленном состоянии происходит рост нитевидных структур Ge за счет катодного восстановления ионов, содержащих Ge, на поверхности электрода с последующим растворением и кристаллизацией в расплаве на границе с подложкой. Полученные результаты показывают решающую роль наличия жидких частиц металла в процессе электрохимического формирования нитевидных нанокристаллов германия.

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Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires

Cited by 64 publications

References 48 publications

Vertical, capacitive microelectromechanical switches produced via direct writing of copper wires

Vertical, capacitive microelectromechanical switches produced via direct writing of copper wires

Carbon-based nano-electro-mechanical systems

Влияние температуры электролита на процесс катодного осаждения нитевидных наноструктур Ge из водных растворов на частицах In и Sn

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