TX and RX Front-Ends for 60GHz Band in 90nm Standard Bulk CMOS

Tanomura, M.; Hamada, Yuri; Kishimoto, S.; Ito, M.; Orihashi, N.; Maruhashi, K.; Shimawaki, H.

doi:10.1109/isscc.2008.4523305

Cited by 109 publications

(36 citation statements)

References 7 publications

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“…For example, the isolation of the CS amplifier reported in [4] is 15 dB less than the PA presented in this work. On the other hand, the CS amplifiers listed in Table III (e.g., [24]) offer similar levels of saturated output power at a supply voltage on the order of 1 V, rather than the 2 V supply used for the cascode PA. Thus, cascode pre-driver stages connected to a CS output stage may offer a reasonable compromise between gain, isolation and output power for a mm-wave CMOS PA.…”

Section: Resultsmentioning

confidence: 99%

“…The passive components in CMOS technologies, such as inductors, transmission lines and metal-insulator-metal (MIM) capacitors, scale with increasing operating frequency, and complement the operation of active devices by optimizing gain over a reduced bandwidth (e.g., using a resonant loads). The combined effects of frequency and device scaling with potential mm-wave applications are stimulating many new research activities [3]- [6], [16]- [20], [24]- [26].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

Jin

Sanduleanu

Long

2008

IEEE J. Solid-State Circuits

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

Jin

Sanduleanu

Long

2008

IEEE J. Solid-State Circuits

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“…The project team consists of Tokyo Tech members in the areas of the antennas, circuits and signal processing, electronics companies JRC for outdoor system, SONY for indoor system, AMMSYS for packaging and WILLCOM, the PHS operator. The critical components in MM-wave wireless systems are RF and Baseband chips as well as the analog and digital signal processing, which have been drastically developed by the Silicon CMOS technology [33], [34]. Figure 19 explains the CMOS chip development scenario in 5 years.…”

Section: Tokyo Tech Wireless-fiber Project For Millimeter Wave Systemsmentioning

confidence: 99%

Planar Waveguide Arrays for Millimeter Wave Systems

Ando

2010

IEICE Trans. Commun.

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SUMMARYDesign of high gain and high efficiency antennas is one of the key challenges in antenna engineering and especially in millimeter wave communication systems. Various types of planar waveguide arrays with series-fed traveling wave operation have been developed in Tokyo Tech with the special focus upon efficiency enhancement as well as reduction of fabrication cost. In this review, four kinds of single layer waveguide arrays characterized with the series fed travelling wave operation are surveyed first. To cope with the bandwidth narrowing effects due to long line effects associated with the series fed operation, authors have introduced partially corporate feed embedded in the single layer waveguide. They further extended the study to cover fully corporate feed arrays with multiple layer waveguide as well; a new fabrication technique of diffusion bonding of laminated thin plates has the potential to realize the low cost mass production of multi-layer structures for the millimeter wave application. Secondly, the novel methods for loss evaluation of copper plate substrate are established for the design of post-wall waveguide arrays where dielectric loss and conductor loss is determined in wide range of millimeter wave band, by using the Whispering gallery mode resonator. This enables us to design the planar arrays with the loss taken into account. Finally, the planar arrays are now applied to two kinds of systems in the Tokyo Tech millimeter wave project; the indoor short range file-transfer systems and the outdoor communication systems for the medium range backhaul links. The latter has been field-tested in the model network built in Tokyo Tech Ookayama campus. Early stage progress of the project including unique propagation data is also reported.

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“…Ultra-high data rate short-range radio modules for multimedia applications operating in the 60-GHz band have been greatly considered in the last few years [1][2][3][4]. Although mm-wave ICs have traditionally been domain of GaAs, InP, and pHEMT technologies, the continuous scaling of silicon processes has made sub-lm CMOS technologies valuable candidates to cover mm-wave applications, thus allowing integration of analog and digital parts in a single chip and reducing cost [1,2].…”

Section: Introductionmentioning

confidence: 99%

Transformer-coupled cascode stage for mm-wave power amplifiers in sub-μm CMOS technology

Giammello

Ragonese

Palmisano

2010

Analog Integr Circ Sig Process

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An amplifier topology based on a transformercoupled cascode stage is presented and compared with the most used solutions for sub-lm CMOS power amplifiers, which are the common-source stage, cascode stage, and capacitive-coupled cascode stage. The comparison was carried out by designing each amplifier in a 65-nm CMOS technology and for a 60-GHz operating frequency. The design was optimized for a trade off among power gain, saturated output power, and linearity. Operating from a 1.2-V supply voltage, the proposed amplifier improves both small-signal and large-signal performance with respect to the most common approaches, thus demonstrating effectiveness with sub-lm CMOS technologies and mm-wave operation.

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TX and RX Front-Ends for 60GHz Band in 90nm Standard Bulk CMOS

Cited by 109 publications

References 7 publications

A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

Planar Waveguide Arrays for Millimeter Wave Systems

Transformer-coupled cascode stage for mm-wave power amplifiers in sub-μm CMOS technology

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