Type I mid-infrared MQW lasers using AlInAsSb barriers and InAsSb wells

Vaughn, Leslie G.; Dawson, L. R.; Pease, E.A.; Lester, L. F.; Xu, Hui; Jiang, Ying‐Bing; Gray, Alan L.

doi:10.1117/12.606226

Cited by 22 publications

(9 citation statements)

References 10 publications

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“…V C 2016 AIP Publishing LLC 108, 081102-1 of the resulting Al x In 1Àx As y Sb 1Ày digital alloy films are provided elsewhere. [18][19][20] A cross-sectional schematic of the Al 0.7 In 0.3 As 0.3 Sb 0.7 device is shown in Fig. 1.…”

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confidence: 99%

Low-noise AlInAsSb avalanche photodiode

Woodson

Ren

Maddox

et al. 2016

Applied Physics Letters

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We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al0.7In0.3As0.3Sb0.7, grown on GaSb. The bandgap energy and thus the cutoff wavelength are similar to silicon; however, since the bandgap of Al0.7In0.3As0.3Sb0.7 is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths. In addition, unlike other III-V avalanche photodiodes that operate in the visible or near infrared, the excess noise factor is comparable to or below that of silicon, with a k-value of approximately 0.015. Furthermore, the wide array of absorber regions compatible with GaSb substrates enable cutoff wavelengths ranging from 1 μm to 12 μm.

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confidence: 99%

Low-noise AlInAsSb avalanche photodiode

Woodson

Ren

Maddox

et al. 2016

Applied Physics Letters

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“…9−11 Using this approach, mid-IR InAsSb/AlInAsSb type-I diode lasers have previously been demonstrated. 10,11 However, these previous studies were limited to Al fractions ranging from 0% to 40%, and photoluminescence (PL) was only observed up to Al fractions of 30%. In this letter, we report on the growth and optoelectronic properties of AlInAsSb digital alloys with Al fractions ranging from 0% to 80%; we identify the functional dependence of the direct bandgap and band offsets on the Al fraction, as well as a probable transition from direct-gap to indirect-gap at an Al fraction of ∼72%.…”

Section: ■ Introductionmentioning

confidence: 99%

Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb

Maddox

March

Bank

2016

Crystal Growth & Design

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Al x In 1−x As y Sb 1−y digital alloys lattice-matched to GaSb were grown within the miscibility gap by molecular beam epitaxy, with aluminum fractions ranging from 0% to 80%. Photoluminescence spectra from Al x In 1−x As y Sb 1−y films and from Al x In 1−x As y Sb 1−y /GaSb type-II superlattices were used to determine the direct bandgap and the band offsets as a function of the aluminum fraction. Varying the aluminum content tuned the direct bandgap from 0.25 eV (0% aluminum) to 1.24 eV (75% aluminum), corresponding to photon wavelengths from 5000 to 1000 nm, with the transition from direct-gap to indirect-gap occurring at ∼1.18 eV (∼72% aluminum), or 1050 nm. This directgap tuning range of 0.93 eV is the largest reported for a III−V alloy lattice-matched to a commercially available substrate. The broadly tunable bandgap and type-I band alignments of this lattice-matched quaternary make it attractive for advanced midinfrared and near-infrared detectors and sources.

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“…In order to bypass the wide miscibility gap present in the Al x In 1-x As y Sb 1-y material system, these layers were grown as a digital alloy of the binary alloys AlAs, AlSb, InAs, and InSb, using a digital alloy period of 3 nm and the following layer sequence: AlSb, AlAs, AlSb, InSb, InAs, Sb. 21,22 The bandgap can be tuned by changing the Al concentration, as shown in Fig. 1(a).…”

Section: Crystal Growth and Device Fabricationmentioning

confidence: 99%

Recent progress in avalanche photodiodes for sensing in the IR spectrum

et al. 2016

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We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al x In 1-x As y Sb 1-y , grown lattice-matched on GaSb substrates. By varying the aluminum content the direct bandgap can be tuned from 0.25 eV (0% aluminum) to 1.24 eV (75% aluminum), corresponding to photon wavelengths from 5000 nm to 1000 nm, with the transition from direct-gap to indirect-gap occurring at ~1.18 eV (~72% aluminum), or 1050 nm. This has been used to fabricate separate absorption, charge, and multiplication (SACM) APDs using Al 0.7 In 0.3 As 0.3 Sb 0.7 for the multiplication region and Al 0.4 In 0.6 As 0.3 Sb 0.7 for the absorber. Gain values as high as 100 have been achieved and the excess noise factor is characterized by a k value of 0.01, which is comparable to or below that of Si. In addition, since the bandgap of the absorption region is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths.

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Type I mid-infrared MQW lasers using AlInAsSb barriers and InAsSb wells

Cited by 22 publications

References 10 publications

Low-noise AlInAsSb avalanche photodiode

Low-noise AlInAsSb avalanche photodiode

Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb

Recent progress in avalanche photodiodes for sensing in the IR spectrum

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