Type-II InAs/InGaSb SL photodetectors

Lin, Chi‐Wei; Anselm, K.A.; Kuo, C. H.; Delaney, A.; Brown, Gail J.; Mahalingam, K.; Saxler, A.; Linville, Raymond J.; Szmulowicz, Frank; Nathan, V.

doi:10.1117/12.382112

Cited by 10 publications

(12 citation statements)

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“…Previous studies on other SL designs had found annealing at !450 C to be beneficial, which agrees with the PR, Hall and lifetime results. 11,12 IV. CONCLUSIONS…”

Section: Samplementioning

confidence: 98%

Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

Haugan

Brown

Elhamri

et al. 2012

Journal of Applied Physics

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The impact of post growth annealing on the electrical properties of a long wavelength infrared type-II superlattice (SL) was explored. Quarters of a single SL wafer were annealed at 440 °C, 480 °C, and 515 °C, respectively for 30 min. Changes in the electrical properties were followed using spectral photoconductivity, temperature dependent Hall effect, and time-resolved pump-probe measurements. The bandgap energy remained at ∼107 meV for each anneal, and the photoresponse spectra showed a 25% improvement. The carrier lifetime increased from 12 to ∼15 ns with annealing. The electron mobility was nearly constant for the 440 °C and 480 °C anneals, and increased from ∼4500 to 6300 cm2/Vs for the 515 °C anneal.

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“…Previous studies on other SL designs had found annealing at !450 C to be beneficial, which agrees with the PR, Hall and lifetime results. 11,12 IV. CONCLUSIONS…”

Section: Samplementioning

confidence: 98%

Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

Haugan

Brown

Elhamri

et al. 2012

Journal of Applied Physics

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“…Several reports of superlattice uniformity across two inch diameter wafers put the period variation at 1% or less and a corresponding band gap variation of 3 meV or less. 7,8,16 These successes with photoconductive samples led to the first attempts to create VLWIR type-II photodiodes. 6,15,17 The first VLWIR (λ>15 µm) superlattice photodiode ever tested was grown at Applied Optoelectronics Inc. by Anselm et al 6 This was a binary/ternary superlattice with 23% indium in the InGaSb layers.…”

Section: Sbmentioning

confidence: 98%

“…Only in the past year have SLs with cut-off wavelengths from 15 to 24 µm been reported. 7,8 Fig. 1 The calculated increase in the cut-off wavelength with InAs layer width for InAs/In 0.25 Ga 0.75 Sb superlattice structures with a fixed InGaSb width of 7 monolayers (ml) is shown by the open circles 4 and squares 5 .…”

Section: Introductionmentioning

confidence: 98%

<title>InAs/InGaSb superlattices for very long wavelength infrared detection</title>

Brown

Szmulowicz

2001

Photodetectors: Materials and Devices VI

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New infrared detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous long and very long wavelength infrared imaging applications. One materials system has shown great theoretical and, more recently, experimental promise for these applications: InAs/In x Ga 1-x Sb type-II superlattices. In the past few years, excellent results have been obtained on photoconductive and photodiode samples designed for infrared detection beyond 10 microns. Far-infrared photoresponse of superlattices with cut-off wavelengths between 15 µm and 25 µm were studied. The measured photoresponse spectra for both photodiodes and photoconductors are compared to calculated absorption coefficient spectra. The electronic structure and the optical absorption of InAs/ In x Ga 1-x Sb superlattice infrared (IR) detector structures are calculated, for several values of x, using our implementation of the 8x8 envelope-function approximation (EFA) formalism. Good experimental-theoretical agreement is obtained regarding the long-wavelength threshold and absorption shape.

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“…The effect of nonlocal pseudopotential is included in the effective mass m*, which is less than the bare electron mass m. The spin-orbit interaction is taken into account by adding the following pseudopotential spin-orbit matrix element to the second term in the left side ofequation (5) v:; = ih22 2 T(s s')…”

Section: Sgavgxmentioning

confidence: 99%

Modeling of optically pumped type-II lasers

Pei

2001

SPIE Proceedings

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The electronic structures of (InAS)m/(GaSb)n short-period superlattices are investigated by the empirical pseudopotential method and multiband kp envelope function approximation with the same underlying bulk band structures. The calculated results are compared to each other and with experiment. Generally, the results of the empirical pseudopotential method are in better agreement with the experimental measurement. The superlattice active region (InAs)7/(h3Ga7Sb)/(InAs)7/(AlSb)6 of an optically-pumped type-I! laser are investigate by the empirical pseudopotential method. The calculated results predict that its lasing wavelength is about 3.51.tm at 80K and internal losses due to intervalence absorption have been suppressed.

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Type-II InAs/InGaSb SL photodetectors

Cited by 10 publications

References 0 publications

Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

<title>InAs/InGaSb superlattices for very long wavelength infrared detection</title>

Modeling of optically pumped type-II lasers

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