Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes

Nguyen, Binh‐Minh; Razeghi, Manijeh; Nathan, V.; Brown, Gail J.

doi:10.1117/12.711588

Cited by 78 publications

(29 citation statements)

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“…The capability of band structure engi− neering opens the horizon for exploring novel device ar− chitectures that are unthinkable using simple binary or ternary compound semiconductor band alignments like MCT. As an example, recent research has proposed a novel variant of T2SL, the M−structure SL, with large effective mass and large tunability of band edge energies [4]. The structure has been shown to efficiently reduce the dark cur− rent in photovoltaic detectors.…”

Section: Introduction: Type II Antimonide Based Superlatticesmentioning

confidence: 99%

Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

Razeghi

Pour

Huang

et al. 2011

Opto-Electronics Review

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Recent efforts to improve the performance of type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and characterization techniques is given. The efforts to improve the performance of MWIR photodiodes and focal plane arrays (FPAs) have been reviewed and the latest results have been reported. It is shown that these improvements has resulted in background limited performance (BLIP) of single element photodiodes up to 180 K. FPA shows a constant noise equivalent temperature difference (NEDT) of 11 mK up to 120 K and it shows human body imaging up to 170 K.

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Section: Introduction: Type II Antimonide Based Superlatticesmentioning

confidence: 99%

Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

Razeghi

Pour

Huang

et al. 2011

Opto-Electronics Review

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“…Moreover, InAs/GaSb and InAs/GaInSb type-II superlattices provide numerous advantageous optoelectronic properties such as high absorption coefficient, higher effective mass of electrons and holes, slower Auger recombination rate with a proper design of the valence band structure, a lower dark current, and higher operating temperatures. These make InAs/ GaSb and InAs/GaInSb type-II superlattices comparable to established HgCdTe IR photodetectors with the high quantum efficiency [3][4][5][6].…”

Section: Introductionmentioning

confidence: 93%

“…The effective band gap of InAs/GaSb and InAs/GaInSb type-II superlattices can be engineered with great flexibility to match mid to far infrared photon energies by selecting appropriate thicknesses for the alternating InAs and GaSb (or GaInSb) layers during crystal growth [3]. Hence there are different performance levels which demonstrate the possibility of multiple band detectors with short wave infrared (SWIR), mid-wave infrared (MWIR), and long wave infrared (LWIR) detectors.…”

Section: Introductionmentioning

confidence: 99%

Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation

Lee¹,

Price²

2018

Two-Dimensional Materials for Photodetector

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This chapter focuses on characterization, modeling, and simulation about the type-II superlattices photodetector application. Despite dramatic improvements in type-II superlattices in the past 15 years, challenges still exist in InAs/GaSb and InAs/GaInSb superlattices: The diffusion current, Shockley-Read-Hall (SRH) recombination current, tunneling current, and surface leakage current at elevated temperature. To establish a set of modeling and simulation input parameters, in-depth materials and device characterization at different conditions are carried out for initial materials and device models. Based on input parameters, we will describe the development of analytical and numerical models of InAs/GaSb and InAs/GaInSb type-II superlattice-structured materials and device systems. At the end of this chapter, the fitting of modeled and simulated data will be performed to compare empirical data and modeling results at a set of temperature, which will provide guidance to achieve the higher performance.

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“…However, the precise position of the barrier in the middle of the well is needed to increase the number of energy states available at the desired energy level [57,59]. Razeghi's group [58,[60][61][62] showed a blocking barrier T2SL with detectivity as high as 1.05 × 10 12 cm Hz 1/2 /W at 150 K in the MWIR regime and then a 320 × 256 pixel FPA was constructed using this design, with imaging possible up to 170 K.…”

Section: Interband Superlattice Irpdmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional lowdimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced lightmatter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes

Cited by 78 publications

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Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation

Emerging technologies for high performance infrared detectors

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