We present a universal nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly-clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetostrictive stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e. g. by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. We use this method to determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique can be useful in particular for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by e. g. electron beam deposition, thermal evaporation or sputtering.Keywords: nanomechanics; magnetostriction; NEMS; thin films Nanomechanical systems are an established platform for mass and force detection. In particular, the high quality factors of their vibrational modes 1 make them ideally suited for high-precision sensing applications in (nano)biology, medicine, chemistry and physics 2-6 . For example, nanomechanical resonators allow for the detection of DNA molecules 7 and atoms 8 , and nanomechanical resonance spectroscopy has been proposed as a versatile tool and extension of conventional spectroscopy techniques in biology and chemistry 9 . In solid state physics, nanomechanical sensors are utilized for the investigation of material properties of thin films 10-12 , which often significantly differ from those of bulk materials 13,14 . One particular aspect is the investigation of externally tunable material properties as discussed in the field of multiferroics 15 . For example, it has been demonstrated that magnetostriction and magnetic anisotropy in a Ga 0.948 Mn 0.052 As thin film can precisely be investigated using a nanomechanical beam setup 16 .Here, we extend this concept and present a universal platform for the experimental investigation of magnetostrictive thin films which uses a doubly-clamped silicon nitride (Si 3 N 4 ) nanobeam covered with a thin layer of the material of interest. This approach allows for the investigation of any magnetostrictive thin film materialconducting as well as insulating-which can be deposited on a Si 3 N 4 nanobeam, using e. g. electron beam evapoa) Electronic mail: matthias.pernpeintner@wmi.badw.de b) Electronic mail: huebl@wmi.badw.de ration, thermal evaporation or sputtering. As the thin film deposition is the last step in the sample fabrication process, the ferromagnetic film is not exposed to etching solution or dry etch reactants, which allows to apply this technique to a broad range of materials. Moreover, the measurement sensitivity is expected to be independent of the film thickness which could be useful for the investigation of very thin magnetostrictive...