Ultra‐Broadband Photodetector for the Visible to Terahertz Range by Self‐Assembling Reduced Graphene Oxide‐Silicon Nanowire Array Heterojunctions

Abstract

High-performance broadband photodetectors have recently attracted signifi cant interest [1][2][3][4][5] because of their importance to a variety of applications, including imaging, remote sensing, environmental monitoring, astronomical detection, photometers and analytical applications. Graphene is a promising material for broadband photodetection applications because of its ability to absorb incident light over a wide wavelength range, from at least the visible (VIS) spectrum to the infrared. [ 6 ] Recent works have demonstrated that zerobandgap single-or few-layer graphene-based photodetectors based on a fi eld-effect transistor (FET) structure could operate in the near-infrared (NIR) and VIS parts of the electromagnetic spectrum. [ 7,8 ] However, no working spectra have been demonstrated for these zero-bandgap graphene photodetectors in longer wavelength ranges. Theoretical calculations indicated that opening and varying the bandgap of

Ultra-broadband and high response of the Bi2Te3–Si heterojunction and its application as a photodetector at room temperature in harsh working environments

“…It is to be noted that the photocurrent can be tuned through more than 2 orders of magnitude within a small voltage range. Unlike other reported photodetectors, 28,29 there is no appreciable change in the magnitude of the dark current as well as the photocurrent over all on/off cycles. 22 Fig.…”

Light Management with Nanostructures for Optoelectronic Devices

“…Specifically, significant photoresponses are observed for all of the irradiations, especially for the demonstration of visible and THz regions (Figure 3e and f). 43 Good photoresponse repeatability is observed in the case of THz illumination but not for the visible irradiation, where the repeatability is weakened, as reflected in the increase of photocurrent with light-on and -off cycles. This is mainly attributed to the thermal effect of Si.…”

“…48 Apart from the antireflective properties, Si nanowire arrays have as well been utilized in conjugation with the reduced graphene oxide (RGO) to improve the corresponding photoresponse from the visible (532 nm) up to the terahertz region (2.52 THz, or a wavelength of 118.8 μm), being the broadest range reported for the photodetectors based on a single device structure. 43 Figure 3d gives a device schematic of the fabricated RGO−Si nanowire array heterojunction photodetector in a two-pole structure. 43 When the detector is irradiated in the dark and illuminated by 532 nm (visible), 1064 nm (near-IR), 10.6 μm (mid-IR), and 118.8 μm (2.52 THz) lasers, the typical current−voltage characteristics and photoresponse are assessed.…”

“…43 Figure 3d gives a device schematic of the fabricated RGO−Si nanowire array heterojunction photodetector in a two-pole structure. 43 When the detector is irradiated in the dark and illuminated by 532 nm (visible), 1064 nm (near-IR), 10.6 μm (mid-IR), and 118.8 μm (2.52 THz) lasers, the typical current−voltage characteristics and photoresponse are assessed. Specifically, significant photoresponses are observed for all of the irradiations, especially for the demonstration of visible and THz regions (Figure 3e and f).…”

Ultra-Broadband THz Antireflective Coating with Polymer Composites

“…To fully exploit the utilization of the THz band, ultra-broadband THz sources [8,9] and detectors [10] are intensively studied. Compared with the significant research focusing on these active THz components, the development of antireflection (AR) coatings, especially very broadband AR coatings, still lags behind.…”