Ultra-compact silicon modulator with 110 GHz bandwidth

Han, Changhao; Jin, Ming; Tao, Yuansheng; Shen, Bitao; Shu, Haowen; Wang, Xingjun

doi:10.1364/ofc.2022.th4c.5

Cited by 34 publications

(13 citation statements)

References 12 publications

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“…Accounting for all optical and electronic components, including the rectified linear unit (ReLU) nonlinearity, this system's latency is limited by the optical time of flight (∼10 ns), and its full-utilization throughput is 1 million MACs per electronic clock cycle with megapixel LCoS SLMs (∼petaMAC/ s). Emerging high-speed photodetectors (43,44) and modulators, e.g., plasmonic electro-optic modulators (45), slow-light silicon modulators (46), or thin-film lithium niobate (47), could potentially achieve even higher throughput in the future. Table 2 contrasts these values to digital electronics and output-stationary dataflows in which the inputs have to be streamed in over time, resulting in a latency that is two orders of magnitude greater for K = 1000.…”

Section: Discussionmentioning

confidence: 99%

Single-shot optical neural network

et al. 2023

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Analog optical and electronic hardware has emerged as a promising alternative to digital electronics to improve the efficiency of deep neural networks (DNNs). However, previous work has been limited in scalability (input vector length K ≈ 100 elements) or has required nonstandard DNN models and retraining, hindering widespread adoption. Here, we present an analog, CMOS–compatible DNN processor that uses free-space optics to reconfigurably distribute an input vector and optoelectronics for static, updatable weighting and the nonlinearity—with K ≈ 1000 and beyond. We demonstrate single-shot-per-layer classification of the MNIST, Fashion-MNIST, and QuickDraw datasets with standard fully connected DNNs, achieving respective accuracies of 95.6, 83.3, and 79.0% without preprocessing or retraining. We also experimentally determine the fundamental upper bound on throughput (∼0.9 exaMAC/s), set by the maximum optical bandwidth before substantial increase in error. Our combination of wide spectral and spatial bandwidths enables highly efficient computing for next-generation DNNs.

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Section: Discussionmentioning

confidence: 99%

Single-shot optical neural network

et al. 2023

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“…[17,18] Over the last decade, silicon-based optoelectronic devices have made many breakthroughs, such as detector and modulator. [19][20][21][22][23][24] However, the performance and functionalities of silicon-based optoelectronic integrated chips are limited by the silicon material itself, such as low loss high-speed modulator and integrated high density light source. But the rapid development of the information society has put forward higher requirements for photonic integrated devices in terms of speed, power consumption, footprint, and integration.…”

Section: Heterogeneous Integrated Materials Enhance Silicon Photonic ...mentioning

confidence: 99%

Silicon-based optoelectronic heterogeneous integration for optical interconnection

Li 李,

Zhang 张

et al. 2024

Chinese Phys. B

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The performance of optical interconnection has improved dramatically in recent years. Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection, which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip, but also improves the system performance through advanced heterogeneous integrated packaging. This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection. The research status, development trend and application of ultra-low loss optical waveguides, high-speed detectors, high-speed modulators, lasers and 2D, 2.5D, 3D and monolithic integration are focused on.

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“…When the silicon MZM delivers a useable modulation depth with a practical input voltage swing, the achievable EO bandwidth is within the range of tens GHz, although the intrinsic bandwidth of the modulator can be much higher than 100GHz. If the requirement for the voltage swing and modulation depth are omitted allowing the phase shifter length to be short (100µm range) then EO bandwidths > 100GHz are possible 25 .…”

Section: Conceptmentioning

confidence: 99%

112G baud sub pJ/bit integrated CMOS-silicon photonics transmitter

Thomson

Liu

et al. 2022

Preprint

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A new design philosophy for integrated CMOS-silicon photonic transmitters is introduced where switching current is applied to the silicon Mach Zehnder Modulator (MZM) rather than operating in the traditional voltage driving mode. With this approach the total electrical energy can be selectively distributed to different frequency components by choosing appropriate inductance and near-end termination impedance values. 112G baud (112Gb/s OOK and 224Gb/s PAM-4) transmission has been experimentally demonstrated with a real power efficiency down to the sub pJ/bit regime without the requirement for power hungry pre-emphasis or signal shaping in the data source. A thorough investigation of the BER for different electrical and optical power conditions of our fully integrated optical transmitter at 100G baud + is performed including the electrical power consumption of the driver which is often neglected in other work.

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Ultra-compact silicon modulator with 110 GHz bandwidth

Abstract: We demonstrate an ultra-compact silicon slow light modulator with a record-high EO bandwidth of 110 GHz, a modulation length of 124 μm, an optical bandwidth of 8 nm around 1550 nm, and OOK transmission beyond 110 Gbps without DSP is achieved.

Cited by 34 publications

References 12 publications

Single-shot optical neural network

Single-shot optical neural network

Silicon-based optoelectronic heterogeneous integration for optical interconnection

112G baud sub pJ/bit integrated CMOS-silicon photonics transmitter

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