Ultra-compact sub-10nm logic circuits based on ambipolar SB-FinFETs

Canan, Talha Furkan; Kaya, Savaş; Kodi, Avinash; Xin, Hao; Louri, Ahmed

doi:10.1109/mwscas.2017.8052870

Cited by 4 publications

(1 citation statement)

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“…With the correct contact metal choice, ambipolar devices, such as the SB-FinFET considered here, can deliver equal current drive for both types of carriers [16], [17] and have been suggested by several groups as a reconfigurable logic element in CMOS circuits [18]. When realized in the form an SB-FinFET with two independent gates optimized with unequal WFs, the same device can operate as a pass gate with separate electron and hole conduction channels in a single-transistor body [19]. It can pass logic 0 and 1 equally well in a single transistor that would normally take two separate MOSFETs in conventional CMOS.…”

Section: Device Structures and Modelingmentioning

confidence: 99%

Ultracompact and Low-Power Logic Circuits via Workfunction Engineering

Canan

Kaya

Kodi

et al. 2019

IEEE J. Explor. Solid-State Comput. Devices Circuits

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An extensive analysis of sub-10-nm logic building blocks utilizing ultracompact logic gates based on recently proposed gate workfunction engineering (WFE) approach is provided. WFE sets the WF in the contacts as well as two independent gates of an ambipolar Schottky-barrier (SB) FinFET to alter the threshold of two channels, as a unique leverage to modify the logic functionality out of a single transistor. Thus, a single transistor (1T) CMOS pass-gate, 2T NAND and NOR gates as well as 3T or 4T XOR gates with substantial reduction in overall area (50%) and power (up to ×10) dissipation can be implemented. To harness this potential and illustrate the capabilities of these compact ambipolar transistors, novel logic building blocks, including 6T multiplexer, 8T full-adder, 4T latch, 6T D-type flip-flop, and 4T AND-OR-invert (AOI) gates, are developed. Besides the logic verification using 7-nm devices, the dynamic performance of the proposed logic circuits is also analyzed. The comparative simulation study shows that WFE in independent-gate SB-FinFETs can lead to absolutely minimalist CMOS logic blocks without significant degradation to overall power-delay product (PDP) performance. INDEX TERMS 3T-XOR, 4T AND-OR-invert (AOI), 6T 4-to-1 multiplexer (MUX), ambipolar, CMOS logic gates, nanotechnology, Schottky-barrier MOSFET, tunneling.

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