Ultra-fast silicon detectors

Sadrozinski, H. F-W.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B. A.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Marchetto, F.; Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A.

doi:10.1016/j.nima.2013.06.033

Cited by 103 publications

(50 citation statements)

References 21 publications

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“…A severe limitation on using plastic scintillators for heavy ions also comes from the rapid degradation of their timing properties under high dose irradiation. Such issues motivate a search for an alternative approach based on the application of planar silicon detectors and/or diamond detectors [2][3][4][5]. The Si detectors have an appropriate sensitivity to the ions down to Lithium and Helium.…”

Section: Materials and Detectorsmentioning

confidence: 99%

Picosecond timing of high-energy heavy ions with semiconductor detectors

Eremin

Kiselev

Egorov³

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Materials and Detectorsmentioning

confidence: 99%

Picosecond timing of high-energy heavy ions with semiconductor detectors

Eremin

Kiselev

Egorov³

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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“…4D tracking N. Cartiglia with signals that are a factor of 10 higher than those of standard sensors, however without the problems connected with the APD high gain [8,9,10,11,12].…”

Section: Pos(ifd2015)026mentioning

confidence: 99%

Tracking in 4 dimensions

Cartiglia¹,

Cenna²,

Ferrero³

et al. 2017

Proceedings of INFN Workshop on Future Detectors — PoS(IFD2015)

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“…thin) and segmented detectors (to avoid the pile-up effect) are required. To address this issue, we are investigating the possibility of using the so called ultra-fast silicon detectors (UFSD) [21], which exploit the same design of the low gain avalanche detectors for the charge multiplication: a gain of a factor 10 in the signal amplitude is obtained by adding to the silicon detector a layer with a really high doping concentration to reach an electric field of about 300 kV/cm, which is enough to have a good signal and not so much to have problems with the dead time. The time resolution obtained is about 20 ps.…”

Section: Ultra Fast Silicon Detectorsmentioning

confidence: 99%

Control Of The Dose Distribution In Charged Particle Therapy

Manganaro¹,

Attili²,

Dalmasso³

et al. 2017

Proceedings of the 26th International Nuclear Physics Conference — PoS(INPC2016)

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The use of ions in radiation therapy aims at improving the selectivity of the irradiation thanks to a favourable depth-dose profile and, in case of heavy ions, to their enhanced radiobiological effect. The treatment modality employing actively scanned pencil beams provides highly conformal dose distributions but is sensitive to uncertainties in the dose calculation, delivery and measurement. During the treatment, the delivery of the beam has to be controlled in real time and monitored with high accuracy, including any effect due to patient positioning and motion. Based on the experience gained in the collaboration with the CNAO (Centro Nazionale di Adroterapia Oncologica, Pavia, Italy), this paper is intended to give an overview of recent techniques and trends for the delivery, measurement and verification of the dose distribution in charged particle therapy with scanned ion beams, focusing in particular on real time and online techniques.

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Ultra-fast silicon detectors

Cited by 103 publications

References 21 publications

Picosecond timing of high-energy heavy ions with semiconductor detectors

Picosecond timing of high-energy heavy ions with semiconductor detectors

Tracking in 4 dimensions

Control Of The Dose Distribution In Charged Particle Therapy

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