2016
DOI: 10.1007/s11837-016-1980-4
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Ultra-Fast Synthesis for Ag2Se and CuAgSe Thermoelectric Materials

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Cited by 34 publications
(33 citation statements)
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“…The magnitude of S of the films with x ≥ 0.30 was found to be significantly higher compared to that of bulk Ag 2 Se which amounts to 140 μV K −1 . 34 The highest power factor of ∼400 μW m −1 K −2 was achieved for the composition with x = 0.60. Because of the formation of a volatilized phase of Se before forming the Ag 2 Se phase through the dissociative adsorption of Se by Ag, no defined grain boundaries were formed as seen in the SEM images (see Figure 3b,c).…”
Section: Resultsmentioning
confidence: 92%
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“…The magnitude of S of the films with x ≥ 0.30 was found to be significantly higher compared to that of bulk Ag 2 Se which amounts to 140 μV K −1 . 34 The highest power factor of ∼400 μW m −1 K −2 was achieved for the composition with x = 0.60. Because of the formation of a volatilized phase of Se before forming the Ag 2 Se phase through the dissociative adsorption of Se by Ag, no defined grain boundaries were formed as seen in the SEM images (see Figure 3b,c).…”
Section: Resultsmentioning
confidence: 92%
“…The RT transport parameters Hall coefficient (R H ), Hall mobility (μ H ), and carrier concentration (n H ) were determined for our film by measuring the Hall voltage (V H ) at 2.5 T. R H is found to be ∼2.8 × 10 −5 m 3 C −1 , whereas n H is estimated to be ∼2.2 × 10 23 m −3 for the printed (0.3)Ag−(0.7)Se-based TE film. The Hall carrier concentration was found to be lower by 1 order of magnitude compared to that of the bulk value 34 because of the presence of the binder and the excess Se which leads to lower conductivity and higher S. μ H is calculated using the Hall coefficient which is found to be ∼3.2 × 10 3 cm 2 V −1 s −1 . The value of μ H is similar to that for bulk Ag 2 Se which signifies the formation of the high carrier mobility percolation path of the Ag 2 Se phase.…”
Section: Gen II Ink (Polystyrene−toluene Based)mentioning
confidence: 99%
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“…Bulk Ag 2 Se chalcogenides are known to exhibit high TE performance at RT. 26 In addition, through dissociative adsorption of Se by Ag, the Ag 2 Se phase is formed at lower temperatures, benecial for printing technology. 27 Previously, various other intricate methods, for example magnetron sputtering 28 and vacuum-assisted ltration, [29][30][31] have been used to prepare high performance exible Ag 2 Se TE lms.…”
Section: Introductionmentioning
confidence: 99%