Ultra-High Bandwidth InP IQ Modulator for Beyond 100-GBd transmission

Ogiso, Yoshihiro; Ozaki, Josuke; Ueda, Yuta; Wakita, Hitoshi; Nagatani, Munehiko; Yamazaki, Hiroshi; Nakamura, Masanori; Kobayashi, Toshio; Kanazawa, Shigeru; Fujii, T.; Hashizume, Yoshio; Tanobe, Hiromasa; Nunoya, Nobuhiro; Ida, M.; Miyamoto, Yutaka; Ishikawa, Masahito

doi:10.1364/ofc.2019.m2f.2

Cited by 20 publications

(13 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Photonic integrated circuit (PIC) technologies e.g. indium phosphide (InP) and silicon material platforms offer more compact dual-polarization I/Q modulator designs [3], [4]. InP MZMs have been demonstrated for QPSK and 16QAM signaling at 128 Gbaud and 112 Gbaud symbols rates, respectively [3].…”

Section: Introductionmentioning

confidence: 99%

“…indium phosphide (InP) and silicon material platforms offer more compact dual-polarization I/Q modulator designs [3], [4]. InP MZMs have been demonstrated for QPSK and 16QAM signaling at 128 Gbaud and 112 Gbaud symbols rates, respectively [3]. However, the fabrication yield, small wafer size and the lack of on-PIC polarization management in dual-polarization coherent transceivers designs pose challenges for full InP based coherent transceiver solutions consequently incresing the cost of the final component.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Differential drive I/Q modulator based on silicon photonic electro-absorption modulators

Melikyan

Kaneda

Kim

et al. 2020

J. Lightwave Technol.

View full text Add to dashboard Cite

We demonstrate up to 100 Gbaud quadratureamplitude modulated (QAM) signal generation with monolithic silicon in-phase quadrature (I/Q)-modulator based on silicongermanium (SiGe) electro-absorption modulators (EAM). The modulator is in a differentially driven Mach-Zehnder (MZ) interferometric configuration similar to the conventional MZ modulator (MZM) based (I/Q) modulators. In particular, singlepolarization quadrature phase-shift keying (SP-QPSK) signaling at symbol rates of 100 Gbaud with BERs below the hard-decision forward error correction (FEC) limit is shown. SP-QPSK optical signal generation and transmission over 80 km single-mode fiber (SMF) are demonstrated at symbol rates of 50 Gbaud with BER of less than 10 −5 . The effect of the frequency roll-off used for Nyquist pulse shaping with raised cosine frequency response is studied for SP-QPSK 50 Gbaud signals. Furthermore, 16QAM signals at symbol rates of 50 Gbaud are generated.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Differential drive I/Q modulator based on silicon photonic electro-absorption modulators

Melikyan

Kaneda

Kim

et al. 2020

J. Lightwave Technol.

View full text Add to dashboard Cite

show abstract

“…Tremendous efforts have been made to realise small-footprint and high-performance IQ modulators in various material platforms, including silicon (Si), indium phosphide (InP), polymers, and plasmonics [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] . Although these platforms normally offer the advantages of compact footprints and large bandwidths, each type of modulator has its limitations, including large V π (Si), high optical loss (plasmonics), nonlinear response (InP), or doubts over long-term stability (polymer).…”

mentioning

confidence: 99%

High-performance coherent optical modulators based on thin-film lithium niobate platform

Zhang³

et al. 2020

Nat Commun

366

152

View full text Add to dashboard Cite

The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase/quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Ideally, such modulator should feature a low loss, low drive voltage, large bandwidth, low chirp and compact footprint. However, these requirements have been only met on separate occasions. Here, we demonstrate integrated thin-film lithium niobate in-phase/quadrature modulators that fulfil these requirements simultaneously. The presented devices exhibit greatly improved overall performance (half-wave voltage, bandwidth and optical loss) over traditional lithium niobate counterparts, and support modulation data rate up to 320 Gbit s −1. Our devices pave new routes for future highspeed, energy-efficient, and cost-effective communication networks.

show abstract

“…Their assembly with the electronic driver has been studied in different platforms [2,3]. Ultra-high bandwidth InP IQ modulator for 100 GBd transmission is shown in [4], and an optical frontend module operating at 192 GBd in [5]. All of the demonstrated state-of-the-art ASICs were fabricated in an inhouse technology process.…”

Section: Introductionmentioning

confidence: 99%

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Trajkovic¹,

Zhang²,

Blache

et al. 2019

45th European Conference on Optical Communication (ECOC 2019)

View full text Add to dashboard Cite

DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement:

show abstract

Ultra-High Bandwidth InP IQ Modulator for Beyond 100-GBd transmission

Cited by 20 publications

References 4 publications

Differential drive I/Q modulator based on silicon photonic electro-absorption modulators

Differential drive I/Q modulator based on silicon photonic electro-absorption modulators

High-performance coherent optical modulators based on thin-film lithium niobate platform

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Contact Info

Product

Resources

About