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An ultra-high bandwidth (BW) and a low V π InP Mach-Zehnder modulator with an n-i-p-n heterostructure is proposed. The combination of the n-i-p-n heterostructure and the capacitive-loaded travelling-wave electrode provides a modulator with extremely low electrical loss. The device exhibits a 3 dB electro-optic BW of over 67 GHz and a V π of 2.0 V. A 100 Gb/s non-return-to-zero on-off keying modulation with an extinction ratio of over 10 dB is also realised.

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