12.3 A 48GHz BW 225mW/ch Linear Driver IC with Stacked Current-Reuse Architecture in 65nm CMOS for Beyond-400Gb/s Coherent Optical Transmitters

Jyo, Teruo; Nagatani, Munehiko; Ozaki, Josuke; Ishikawa, Masahito; Nosaka, Hideyuki

doi:10.1109/isscc19947.2020.9063027

Cited by 16 publications

(9 citation statements)

References 3 publications

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“…While a better power efficiency for a higher datarate is obtained for the coherent transmitter in [22], the transmitter has around 3 dB peaking in its EO response, and quite some equalization will be required to flatten this response and avoid degradation in the PAM4 eye. In the case of [22], this equalization is provided by the digital signal processing required for the coherent experiments. This is undesired for short-reach datacenter interconnects employing PAM4, as additional equalization increases the total link power consumption and the link latency.…”

Section: Resultsmentioning

confidence: 99%

“…This is undesired for short-reach datacenter interconnects employing PAM4, as additional equalization increases the total link power consumption and the link latency. No transmission experiments without additional DSP are shown in [22], prohibiting a correct comparison. Comparing the presented transmitter to the other references, we can show the best power efficiency at 50 and 53 Gbaud thanks to the use of the limiting driver coupled to a segmented traveling-wave modulator and thorough co-design of the driver and modulator.…”

Section: Resultsmentioning

confidence: 99%

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50 GBd PAM4 transmitter with a 55nm SiGe BiCMOS driver and silicon photonic segmented MZM

Breyne¹,

Ramon²,

Gasse³

et al. 2020

Opt. Express

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We demonstrate an optical transmitter consisting of a limiting SiGe BiCMOS driver co-designed and co-packaged with a silicon photonic segmented traveling-wave Mach-Zehnder modulator (MZM). The MZM is split into two traveling-wave segments to increase the bandwidth and to allow a 2-bit DAC functionality. Two limiting driver channels are used to drive these segments, allowing both NRZ and PAM4 signal generation in the optical domain. The voltage swing as well as the peaking of the driver output are tunable, hence the PAM4 signal levels can be tuned and possible bandwidth limitations of the MZM segments can be partially alleviated. Generation of 50 Gbaud and 53 Gbaud PAM4 yields a TDECQ of 2.8 and 3.8 dB with a power efficiency of 3.9 and 3.6 pJ/bit, respectively; this is the best reported efficiency for co-packaged silicon transmitters for short-reach datacenter interconnects at these data rates. With this work, we show the potential of limiting drivers and segmented traveling-wave modulators in 400G capable short-reach optical interconnects.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

50 GBd PAM4 transmitter with a 55nm SiGe BiCMOS driver and silicon photonic segmented MZM

Breyne¹,

Ramon²,

Gasse³

et al. 2020

Opt. Express

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“…Nowadays, the typical high-baud rate optical transmitters rely on digital signal processing (DSP), a digital-to-analog conversion (DAC), a modulator driver, and an optical I/Q modulator [1], [2], [3]. The next-generation (coherent) transmitters use dualpolarization, I/Q modulation, and pulse amplitude modulation (PAM) techniques to boost the overall transmitting data rate to exceed 800 Gb/s [1], [2]. This requires the integrated RF components to feature a wide bandwidth and a low THD.…”

mentioning

confidence: 99%

“…The output swing of modulator drivers in CMOS is usually below 3 Vppd [2], [8], [9] as it is limited by the device breakdown voltage, which is technology-dependent. In recent years, drivers designed in technologies such as SiGe BiCMOS [10], [11], [12], [13], [14], [15], and InP DHBT [16], [17], [18] have been investigated because they have a collectorto-emitter breakdown voltage BV CEO over 1.5 V and f T / f MAX above 300 GHz.…”

mentioning

confidence: 99%

“…In recent years, drivers designed in technologies such as SiGe BiCMOS [10], [11], [12], [13], [14], [15], and InP DHBT [16], [17], [18] have been investigated because they have a collectorto-emitter breakdown voltage BV CEO over 1.5 V and f T / f MAX above 300 GHz. Those drivers achieve excellent performances: a low-frequency gain of more than 20 dB [2], [10], [13], a 3-dB bandwidth of over 67 GHz [10], [12], [13], [14], [18], and an output swing of beyond 4 Vppd [10], [11], [15] with a data rate of more than 90 Gb/s.…”

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confidence: 99%

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A Linear Modulator Driver With Over 70-GHz Bandwidth 21.8-dB Gain and 3.4-Vppd Output Swing for Beyond 120-GBd Optical Links

Niu,

Ahmed,

Lambrecht

et al. 2024

IEEE Trans. Microwave Theory Techn.

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This article investigates a linear differential modulator driver for optical communication links beyond 120 GBd. The driver was implemented in a 55-nm SiGe BiCMOS technology with an f T / f MAX of 330/370 GHz, featuring a traveling wave output stage driven by a lumped variable gain amplifier (VGA) and a predriver. The fabricated IC achieved a maximum low-frequency gain of 21.8 dB with more than 10-dB gain control capability and a 3-dB bandwidth of over 70 GHz. Power measurement results show the driver is able to deliver a constant output swing of 3.56 Vppd while keeping the THD below 2%, with the differential input swing varying from 0.3 to 1.03 Vppd at 1 GHz. In the largesignal measurement, the chip delivered 72, 106, 112, and 128 GBd pulse amplitude modulation-4 (PAM-4) signals with differential output swings of 4, 3.59, 3.434, and 3.425 Vppd, respectively. The chip's total power consumption is 725 mW, resulting in a power efficiency of 2.83 pJ/bit. Overall, this is the first time an optical modulator driver reported the ability to accommodate such a wide input swing and demonstrated the operation at a data rate of 256 Gb/s. These features make it a desired candidate for beyond 120-GBd optical links.

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Optical modulators

Reed¹,

Thomson²,

Zhang³

et al. 2023

Integrated Photonics for Data Communication Applications

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12.3 A 48GHz BW 225mW/ch Linear Driver IC with Stacked Current-Reuse Architecture in 65nm CMOS for Beyond-400Gb/s Coherent Optical Transmitters

Cited by 16 publications

References 3 publications

50 GBd PAM4 transmitter with a 55nm SiGe BiCMOS driver and silicon photonic segmented MZM

50 GBd PAM4 transmitter with a 55nm SiGe BiCMOS driver and silicon photonic segmented MZM

A Linear Modulator Driver With Over 70-GHz Bandwidth 21.8-dB Gain and 3.4-Vppd Output Swing for Beyond 120-GBd Optical Links

Optical modulators

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