Ultra high voltage MOS controlled 4H-SiC power switching devices

Ryu, Sei‐Hyung; Capell, Craig; Brunt, Edward Van; Jonas, Charlotte; O’Loughlin, Michael J.; Clayton, Jack; Lam, Khiem; Pala, Vipindas; Hull, Brett; Lemma, Yemane; Lichtenwalner, Daniel J.; Zhang, Q J; Richmond, Jim; Butler, Peter C.; Grider, David; Casady, Jeff B.; Allen, Scott T.; Palmour, John W.; Hinojosa, Miguel; Tipton, C.W.; Scozzie, Charles

doi:10.1088/0268-1242/30/8/084001

Cited by 41 publications

(25 citation statements)

References 5 publications

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“…2), and it must be very thick with very low doping to provide high blocking voltage, substrate and epitaxial layer quality now dominate the device performance. Using high quality 150 μm thick 4.5×10 14 cm -3 N-doped epitaxial layers, we have fabricated 15kV, 10A rated SiC MOSFETs [16], demonstrating a specific on-resistance very close to the theoretical limit, as shown in Fig. 2.…”

Section: High-voltage Rated Devices (Up To 15kv)mentioning

confidence: 67%

“…The R on,sp is just above 200 mOhm-cm 2 , while the devices block up to 16 kV with <1 μA leakage. While similarly rated SiC IGBTs can have a lower on-state resistance, the MOSFET becomes favored at switching frequencies above about 5 kHz, due to inherently higher switching loss in bipolar devices [16]. This high of a voltage rating has yet to be demonstrated with silicon power semiconductor devices.…”

Section: High-voltage Rated Devices (Up To 15kv)mentioning

confidence: 99%

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Performance and Reliability of SiC Power MOSFETs

et al. 2016

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Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and with lower switching losses. Silicon carbide power MOSFET development has progressed rapidly since the market release of Cree's 1200V 4H-SiC power MOSFET in 2011. This is due to continued advancements in SiC substrate quality, epitaxial growth capabilities, and device processing. For example, high-quality epitaxial growth of thick, low-doped SiC has enabled the fabrication of SiC MOSFETs capable of blocking extremely high voltages (up to 15kV); while dopant control for thin highly-doped epitaxial layers has helped enable low on-resistance 900V SiC MOSFET production. Device design and processing improvements have resulted in lower MOSFET specific on-resistance for each successive device generation. SiC MOSFETs have been shown to have a long device lifetime, based on the results of accelerated lifetime testing, such as hightemperature reverse-bias (HTRB) stress and time-dependent dielectric breakdown (TDDB).

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Section: High-voltage Rated Devices (Up To 15kv)mentioning

confidence: 67%

Section: High-voltage Rated Devices (Up To 15kv)mentioning

confidence: 99%

Performance and Reliability of SiC Power MOSFETs

et al. 2016

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“…The impurity oxygen was considered to be mixed into the sample when it was exposed to the atomosphere. Table I Table I also suggests the removal of Si since the weight density of SiO 2 is 2.2 g/cm 3 .…”

Section: Analyses Of Sic Surfacementioning

confidence: 99%

Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

Shimabayashi

Kurihara

Horikawa

et al. 2016

Jpn. J. Appl. Phys.

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We examined the atomic concentrations and the weight densities of SiC surfaces irradiated with remote nitrogen plasmas. The unique approach of this work is that we compared the SiC surface irradiated with atomic nitrogen with that irradiated with a mixture of atomic nitrogen and molecular nitrogen in the metastable A 3 Σ + u state. As a result, it was found that molecular nitrogen in the A 3 Σ + u state has a higher efficiency than atomic nitrogen in the nitriding of SiC surfaces. The weight density measurements have revealed the removal of Si and C from the SiC surface by the irradiation of remote nitrogen plasma. These results suggest that the formation of volatile molecules is less significant when the SiC surface is irradiated with molecular nitrogen in the metastable A 3 Σ + u state.

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“…The gate of the two structures is n-type poly-silicon. And in order to block the 15KV, the doping and thickness of N-drift region is chosen based on [18] and [25]. The physical parameters of the every region are shown in TABLE I.…”

Section: Device Simulation Setupmentioning

confidence: 99%

4H-SiC trench IGBT with lower on-state voltage drop

Liu

Wang

et al. 2017

Superlattices and Microstructures

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In this paper, a new 4H-SiC trench-gate IGBT structure incorporated a P + shielding region in the emitter side is proposed in order to reduce the on-state voltage drop. Through the 2-D ATLAS simulation, the characteristics of the proposed structure are investigated and compared with the conventional structure. The simulation results indicate that the proposed structure exhibits an improvement in the following. Firstly, the on-state voltage drop is reduced by 32.75%. Secondly, the differential specific on-resistance is reduced by 42.33%. Finally, under the same on-state voltage drop, the turn-off energy is reduced more than 50.00%. At the end of the paper, it is explored that what effects the physical parameter of the P + shielding region in the proposed structure have on the steady state performances.

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Ultra high voltage MOS controlled 4H-SiC power switching devices

Cited by 41 publications

References 5 publications

Performance and Reliability of SiC Power MOSFETs

Performance and Reliability of SiC Power MOSFETs

Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

4H-SiC trench IGBT with lower on-state voltage drop

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