Ultra Linear 3.5GHz RF Front-End for OFDM System

Cortese, P.; David, S.; Toux, T.; Mayock, Jim; Pilcher, I.; Sanham, J.

doi:10.1109/csics.2006.319886

Cited by 5 publications

(5 citation statements)

References 1 publication

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“…Advanced wireless data communications such as WiMAX (Worldwide Interoperability for Microwave Access) allocated in 2.5-GHz, 3.5-GHz, and 5-GHz bands have attracted a great deal of attention because they allow high data rates up to 70 Mb/s [1][2][3]. The communications are based on the use of orthogonal frequency division multiplexing (OFDM) complied with IEEE 802.16-2004/16e, due to its robustness over multi-path fading environments.…”

Section: Introductionmentioning

confidence: 99%

Fully Integrated GaAs HBT MMIC Power Amplifier Modules for 2.5/3.5-GHz-Band WiMAX Applications

Miyashita¹,

Okuda²,

Kurusu³

et al. 2007

2007 IEEE Compound Semiconductor Integrated Circuits Symposium

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This paper describes two GaAs HBT MMIC power amplifier modules (PAs) for 2.5-GHz-and 3.5-GHz-band Wi-MAX applications. Each amplifier module integrates a fully 50-Ω input/output matched three-stage amplifier, a 0/20-dB step attenuator, an attenuator controller, and an RF detector together with all bias circuits, featuring on-module full integration. The step attenuator operating with high power handling capability, low-distortion, and low-bias current is placed between the first and second stages, thereby suppressing the change of the input return loss between thru and attenuation modes.With the 4.5 mm x 4.5 mm small-size module, optimized circuit design approaches lead to the following good measurement results under the 6-V supply voltage and WiMAX modulation (64QAM) test condition. The 2.5-GHz-band PA is capable of delivering a high gain (G p ) of over 31.9 dB, EVM of less than 2.1%, and PAE of more than 13.4% at a 28-dBm high output power (P out ). For the 3.5-GHz-band PA, a high G p of over 28.1 dB, EVM of less than 2.4%, and PAE of over 11% are achieved at a P out of 28 dBm.

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Section: Introductionmentioning

confidence: 99%

Fully Integrated GaAs HBT MMIC Power Amplifier Modules for 2.5/3.5-GHz-Band WiMAX Applications

Miyashita¹,

Okuda²,

Kurusu³

et al. 2007

2007 IEEE Compound Semiconductor Integrated Circuits Symposium

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“…As illustrated in Fig. 1(a), power detectors are often used together with a directional coupler to measure accurate forward transmit power [1,2]. In contrast, as can be seen in wireless LAN/WiMAX applications, there are some cases where the detectors directly monitor transmit power at a collector terminal of the PA without a coupler ( Fig.…”

Section: Introductionmentioning

confidence: 97%

“…An on-chip power detector fabricated with the GaAs PAs is one of the effective ways to realize the integration [1][2][3][4][5]. As illustrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…Although one of the alternative schemes in reducing the influence by the mismatch [6,7] is to monitor power at a base terminal of the PA, it is not basically easy to implement the detector with less frequency dependence, as will be described later. Regarding circuit topologies, in GaAs PAs, a diode-based topology is widely used because of easy implementation and wide dynamic range of input power [1,2,5,8,9]. However, the diode topology cannot offer logarithmic characteristics which are suitable for handling in a variety of sensor systems [10].…”

Section: Introductionmentioning

confidence: 99%

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A Current-Mirror-Based GaAs-HBT RF Power Detector for Wireless Applications

Yamamoto

Miyashita

Kurusu

et al. 2007

2007 IEEE Compound Semiconductor Integrated Circuits Symposium

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This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in wireless applications. The detector features logarithm-like, frequency-independent characteristics. The detector can be also driven with small input power levels, enabling base-terminal monitor which can utilize directivity of a power stage. Since a unique current-mirror-based topology is successfully employed for realizing these features, the detector is easy to implement on a GaAs HBT power amplifier. Measurement results of a prototype detector fabricated with a single-stage amplifier on the same die are as follows. The detector can deliver a detection voltage of 0.4-2.5V and its slope of less than 0.17 V/dB over a 2-22-dBm output power range at 3.5 GHz while drawing a current of less than 1.8mA from a 2.85-V supply. The detector is also capable of suppressing voltage dispersion within 50 mV over a 3.1-3.9-GHz wide frequency range operation, and this dispersion is less than one-seventh of that of a conventional collector-terminal-monitor type diode detector.

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“…From the above cited works only two focus on full PVT variation [4], [13]. The published papers mainly focus on the temperature sensitivity and only few of them study the impact of temperature on linearity indicators ( [6], [9], [10], [14], [15]). A technique that deals with the PVT variation of power amplifiers and at the same time discusses its effects on both power and linearity indicators is essential in the PA design process.…”

Section: Introductionmentioning

confidence: 99%

Process, Voltage and Temperature Compensation Technique for Cascode Modulated PAs

Sira

Larsen

2013

IEEE Trans. Circuits Syst. I

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This paper presents a process, voltage and temperature (PVT) compensation method for a cascode modulated polar power amplifier (PA). It is shown that it is possible to create a baseband replica circuit of the PA that has the same AM-AM nonlinearity as the PA itself. The replica circuit, that represents a transistor level model (empirical model) of the cascode modulated PA, is utilized in a PA analog predistorter. The analog predistorter linearizes and compensates for PVT variation of the cascode modulated PA. The empirical model is placed in the negative feedback of an operational transconductance amplifier. The predistorted varying envelope signal is applied to the cascode gate of the PA. It is shown that the proposed PVT compensation technique significantly reduces the PVT spread of the PA linearity indicators and improves the PA linearity. Simulations were performed in a 0.13 CMOS process.

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Ultra Linear 3.5GHz RF Front-End for OFDM System

Cited by 5 publications

References 1 publication

Fully Integrated GaAs HBT MMIC Power Amplifier Modules for 2.5/3.5-GHz-Band WiMAX Applications

Fully Integrated GaAs HBT MMIC Power Amplifier Modules for 2.5/3.5-GHz-Band WiMAX Applications

A Current-Mirror-Based GaAs-HBT RF Power Detector for Wireless Applications

Process, Voltage and Temperature Compensation Technique for Cascode Modulated PAs

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