2014
DOI: 10.1021/nn501824r
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Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems

Abstract: Neuromorphic computing is an attractive computation paradigm that complements the von Neumann architecture. The salient features of neuromorphic computing are massive parallelism, adaptivity to the complex input information, and tolerance to errors. As one of the most crucial components in a neuromorphic system, the electronic synapse requires high device integration density and low-energy consumption. Oxide-based resistive switching devices have been shown to be a promising candidate to realize the functions … Show more

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Cited by 179 publications
(136 citation statements)
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“…Recently, an ultra-low-energy oxide-based synapse with three-dimensional vertical structure of Pt/AlO x /HfO x /TiN has been developed for implementation of robust high-accuracy neuromorphic computation systems [23]. The maximum energy consumption of less than 1 pJ per spike has been confirmed.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, an ultra-low-energy oxide-based synapse with three-dimensional vertical structure of Pt/AlO x /HfO x /TiN has been developed for implementation of robust high-accuracy neuromorphic computation systems [23]. The maximum energy consumption of less than 1 pJ per spike has been confirmed.…”
Section: Introductionmentioning
confidence: 99%
“…[38,89,91] The new concept of the 3D synapse also has emerged, using the multiple layer of 3D RRAM arrays to store the synaptic weights and conduct matrix multiplication. [38,89,91] The new concept of the 3D synapse also has emerged, using the multiple layer of 3D RRAM arrays to store the synaptic weights and conduct matrix multiplication.…”
Section: D Stacking For Scalabilitymentioning
confidence: 99%
“…To perform brain-inspired computing, works using memristive devices as artificial synapses have been proposed [4–6]. Among them, oxide-based RRAM (resistive-switching random access memory) has emerged as one of the most promising candidates for the electronic synaptic device application [7–10] due to its features such as non-volatility, simple MIM structure, low power consumption, great potential for scaling down, and compatibility with CMOS process [11–15].…”
Section: Introductionmentioning
confidence: 99%