Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture

Benatti, Lorenzo; Zanotti, Tommaso; Pavan, Paolo; Puglisi, Francesco Maria

doi:10.1016/j.mee.2023.112062

Cited by 5 publications

(3 citation statements)

References 36 publications

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“…SDC memristors exhibit variability in resistance by leveraging ion-conductive properties, specifically through the migration of Ag + ions within the device structure [21,22,25].…”

Section: Self-directed Channel Memristorsmentioning

confidence: 99%

“…The consistent separation between the Ag-source (comprising Ge 2 Se 3 /Ag/Ge 2 Se 3 layers) and the top electrode allows for high-temperature processes, enabling prolonged continuous operation at 150 • C [21]. Additionally, there is no need for a high voltage forming step, as the set voltage during regular device operation can efficiently transition a pristine device into a low-resistance state [26] Moreover, the programming voltages and compliance current values required are significantly lower compared to traditional metal-oxide RRAMs, resulting in reduced power consumption [25,27].…”

Section: Self-directed Channel Memristorsmentioning

confidence: 99%

“…In contrast, the reset operation (leading to a high-restive state, HRS) occurs suddenly, disrupting loop symmetry. The low power consumption is attributed to small currents and notably low voltage levels required for set and reset, as there is no necessity for initiating a true soft breakdown in the device [25]. Knowm Inc. produces four versions of dopants introduced into the active layer of memristors:…”

Section: Self-directed Channel Memristorsmentioning

confidence: 99%

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Comprehensive Study of SDC Memristors for Resistive RAM Applications

Garda,

Bednarz

2024

Energies

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Memristors have garnered considerable attention within the scientific community as devices for emerging construction of Very Large Scale Integration (VLSI) systems. Owing to their inherent properties, they appear to be promising candidates for pivotal components in computational architectures, offering alternatives to the conventional von Neumann architectures. This work has focused on exploring potential applications of Self-Directed Channel (SDC) memristors as novel RRAM memory cells. The introductory section of the study is dedicated to evaluating the repeatability of the tested memristors. Subsequently, a detailed account of the binary programming testing process for memristors is provided, along with illustrative characteristics depicting the impact of programming pulses on a memory cell constructed from a memristor. A comprehensive data analysis was then conducted, comparing memristors with varying types of doping. The results revealed that SDC memristors exhibit a high level of switching, certainty between the Low Resistance State (LRS) and High Resistance State (HRS), suggesting their capability to facilitate the storage of multiple bits within a single memory cell.

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“…SDC memristors exhibit variability in resistance by leveraging ion-conductive properties, specifically through the migration of Ag + ions within the device structure [21,22,25].…”

Section: Self-directed Channel Memristorsmentioning

confidence: 99%