2007
DOI: 10.1049/el:20071208
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Ultra-low power subthreshold current-mode logic utilising PMOS load device

Abstract: A novel approach for implementing MOS current-mode logic circuits that can operate with ultra-low bias currents is introduced. Measurements of test structures fabricated in 0.18 mm CMOS technology show that the proposed PMOS load device concept can be utilised successfully for bias currents as low as 1 nA, achieving sufficiently high gain ( > 3) over a wide frequency range.Introduction: Current-mode logic (CML) circuits are widely used in many high-speed and high-performance applications [1]. The differential … Show more

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Cited by 24 publications
(15 citation statements)
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“…In this Section, after a short overview on source-coupled logic (SCL) and subthreshold SCL (STSCL) circuits [4], the main constraint in the design of STSCL circuits operating with ultra-low power consumption will be studied [5].…”
Section: Performance Analysis Of Subthreshold Source-coupled Logicmentioning
confidence: 99%
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“…In this Section, after a short overview on source-coupled logic (SCL) and subthreshold SCL (STSCL) circuits [4], the main constraint in the design of STSCL circuits operating with ultra-low power consumption will be studied [5].…”
Section: Performance Analysis Of Subthreshold Source-coupled Logicmentioning
confidence: 99%
“…STSCL Topology Figure 1 shows the topology of a subthreshold SCL circuit [4]. In this topology, all transistors are biased in subthreshold regime.…”
Section: Performance Analysis Of Subthreshold Source-coupled Logicmentioning
confidence: 99%
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“…The design of such high-precision supply voltage control systems, however, becomes more challenging in battery operated systems where the power budget is very restricted and also battery voltage reduces with time. Subthreshold source-coupled logic (STSCL) topology has recently been shown as an alternative approach for implementing ultra-low power circuits [8], [9]. The accurate control on the power consumption of each gate makes this topology very suitable for very low bias current operations where the dissipation of conventional static CMOS circuits is limited by their subthreshold leakage current.…”
Section: Introductionmentioning
confidence: 99%
“…Fig. 1 (inset) shows the proposed device in which the transistor is biased in the subthreshold regime [3,4]. In this configuration, the bulk of the PMOS device (which is an isolated n-well) is connected to its drain.…”
mentioning
confidence: 99%