Ultra Low Voltage Sub-100 mV Vdd CMOS

Aunet, Snorre

doi:10.1109/newcas50681.2021.9462735

Cited by 2 publications

(3 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Owing to the similarity of ( 24) to x = we w , algorithm 443 is employed to determine the drain current by following a few steps: first, the normalized forward and reverse charge densities q IS(D) are determined; then, by applying their values in (6), we obtain the respective inversion levels i f (r) , which, at last, are applied in (1), resulting in the drain current I D . A sample of the Verilog-A description is presented in Appendix A to clarify how algorithm 443 was implemented to solve (24).…”

Section: Including the 4pm In Cadencementioning

confidence: 99%

“…The CMOS inverter in Figure 10 is a versatile and simple circuit employed in various ULV digital circuits [6,8] and analog building blocks, such as amplifiers and oscillators [10,24]. Well-designed CMOS inverters usually present a perfect balance between the N and P networks, which means that in the voltage transfer curve, the mid-point voltage corresponds to V OUT = V I N = V DD /2.…”

Section: Cmos Invertermentioning

confidence: 99%

“…In the fast expanding ultra-low-voltage domain [6], some short-channel effects, such as velocity saturation, are not relevant; thus, a simplified MOSFET model can be satisfactory for circuit design. Targeting the increasing number of ultra-low-voltage designs [7][8][9][10][11][12], this work proposes a four-parameter model (4PM) based on the all-region advanced compact MOSFET model (ACM) [13].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits

Adornes

Neto

Schneider

et al. 2022

JLPEA

View full text Add to dashboard Cite

This work proposes a truly compact MOSFET model that contains only four parameters to assist an integrated circuits (IC) designer in a design by hand. The four-parameter model (4PM) is based on the advanced compact MOSFET (ACM) model and was implemented in Verilog-A to simulate different circuits designed with the ACM model in Verilog-compatible simulators. Being able to simulate MOS circuits through the same model used in a hand design benefits designers in understanding how the main MOSFET parameters affect the design. Herein, the classic CMOS inverter, a ring oscillator, a self-biased current source and a common source amplifier were designed and simulated using either the 4PM or the BSIM model. The four-parameter model was simulated in many sorts of circuits with very satisfactory results in the low-voltage cases. As the ultra-low-voltage (ULV) domain is expanding due to applications, such as the internet of things and wearable circuits, so is the use of a simplified ULV MOSFET model.

show abstract

Section: Including the 4pm In Cadencementioning

confidence: 99%