Abstract:Ge-source dopingless tunnelling field effect transistor (Ge-source DLTFET) with the optimization of dielectric oxide thickness under the source and the gate contacts is proposed and investigated by calibrated 2D TCAD device simulation. As the structure is realized using dopingless technique, this enables lower thermal budget, higher immunity towards the random dopant fluctuations (RDFs) effects and velocity degradation effects. The optimization of dielectric thickness has been done to tune the carrier concentr… Show more
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