2013
DOI: 10.1063/1.4807130
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Ultra-thin free-standing single crystalline silicon membranes with strain control

Abstract: We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineere… Show more

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Cited by 60 publications
(51 citation statements)
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“…The introduction of controlled stress (σ) in the membrane offers an additional degree of freedom to tailor the phonon dispersion relations [61]. A schematic representation of a stressed membrane with a surrounding strain-controlling frame is shown in Figure 2a [62].…”
Section: Confinement Effects In Low-dimensional Structures: Discretismentioning
confidence: 99%
“…The introduction of controlled stress (σ) in the membrane offers an additional degree of freedom to tailor the phonon dispersion relations [61]. A schematic representation of a stressed membrane with a surrounding strain-controlling frame is shown in Figure 2a [62].…”
Section: Confinement Effects In Low-dimensional Structures: Discretismentioning
confidence: 99%
“…This discovery opens up the possibility to further optimize the TC of ultra-thin silicon membranes by combining resonances with mass scattering, which affects phonons with higher frequency (ω 4 THz). We show that alloying the crystalline core of ultra-thin membranes with a small percentage of substitutional germanium atoms brings forth ultra-low TC in silicon membranes with technologically viable thickness [33].…”
mentioning
confidence: 99%
“…This discovery opens up the possibility to further optimize the TC of ultra-thin silicon membranes by combining resonances with mass scattering, which affects phonons with higher frequency (ω 4 THz). We show that alloying the crystalline core of ultra-thin membranes with a small percentage of substitutional germanium atoms brings forth ultra-low TC in silicon membranes with technologically viable thickness [33].All TCs are calculated with equilibrium molecular dynamics (EMD) simulations at 300 K using LAMMPS [34] with interatomic interactions described by the widely used Tersoff potential [35][36][37]. The equations of motion are integrated with the velocity Verlet algorithm arXiv:1705.03143v1 [cond-mat.mtrl-sci]…”
mentioning
confidence: 99%
“…The membranes with areas of ∼500 × 500 micrometer squared were fabricated on 150 mm silicon-on-insulator (SOI) wafers using Si MEMS processing techniques [24]. The underlying Si substrate and the buried oxide layer were removed through a combination of dry and wet etching techniques to leave a top layer of suspended silicon.…”
mentioning
confidence: 99%