Ultra-wide-band (&gt;40 GHz) submicron InGaAs metal-semiconductor-metal photodetectors

Böttcher, E.H.; Dröge, E.; Bimberg, D.; Umbach, A.; Engel, Herbert

doi:10.1109/68.531844

Cited by 18 publications

(3 citation statements)

References 5 publications

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“…Responsivity (external quantum efficiency) in a quantum-well device suffers from a small photo-absorption volume. Similar studies have shown that an increase in bandwidth for photodetectors with thin absorption layers is accompanied by a commensurate decrease in responsivity [19,20]. The responsivity calculated from the photocurrent in Figure 3 is only 5 ϫ 10 Ϫ4 A/W.…”

Section: Resultssupporting

confidence: 69%

Physical modeling of a novel barrier‐enhanced quantum‐well photodetector device for optical receivers

Tait

Nabet

2003

Micro & Optical Tech Letters

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circuit item that is 125 mm in length. The matching network is a three-item impedance convertor, working in the 15-30-MHz frequency. The reflection coefficient curves in complex plane ͉⌫͉ are obtained by the reflection coefficient modulus method described in this paper, and each circle ͉⌫͉ corresponds to one frequency point, with most of the values satisfying ͉⌫͉ Ͻ 0.5. CONCLUSIONIn practice, the modulus of ⌫ L is always known and the phase remains unknown. This paper has presented an in-depth study of the load-reflection coefficient modulus and its variety, as well as bandwidth inequality, and an example which achieves very good results has been given. REFERENCES

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Section: Resultssupporting

confidence: 69%

Physical modeling of a novel barrier‐enhanced quantum‐well photodetector device for optical receivers

Tait

Nabet

2003

Micro & Optical Tech Letters

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“…In surface illuminated conventional p-i-n photodiodes or metal-semiconductor-metal photodetectors a high bandwidth entails a limited responsivity [1]. In contrast, structures with illumination perpendicular to the electric field, such as waveguide detectors [2][3][4] or waveguide integrated photodiodes [5][6][7][8] provide high responsivities at ultrahigh frequencies.…”

Section: High-speed Photodetectorsmentioning

confidence: 99%

High-speed integrated photodetectors for 40-Gbit/s applications

Umbach

2003

SPIE Proceedings

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Photonic integrated photodetectors are built by combining guided-wave, optoelectronic and microwave devices. They offer high conversion efficiency, extremely high speed operation and high power linearity up to 20 mW of optical power. A careful design of the applied spot size converter allows an optimized fiber-chip coupling and polarization insensitive performance of the photodiodes. Recent results of electro-optic sampling measurements reveal 3 dB-and 6 dB-bandwidth of 64 GHz and 100 GHz, respectively, as well as an excellent phase linearity up to 160 GHz. Further integration of two photodiodes leads to e.g. 40 GHz balanced detectors enabling DPSK transmission for longhaul systems. Using optical pre-amplification an excellent sensitivity of -32 dBm was achieved at 40 Gbit/s.

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“…The corresponding frequency responses are determined by calculating the Fourier transform over an entire period of the pulse train and correcting for the errors introduced by the measuring system. More details of the error correction procedure which is essentially based on vector measurements were described elsewhere [ 5 ] . The resulting ffequency responses are shown in Fig.…”

mentioning

confidence: 99%

Ultrafast ion-implanted InGaAs metal-semiconductor-metal photodetectors

Böttcher

Dröge²,

Bimberg³

et al.

Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting

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Metal-semiconductor-metal photodetectors with interdigital electrode pattern are very attractive for applications in ultrafast optoelectronics and electronics such as high-speed switching and signal processing. In order to extend their bandwidth beyond the transit-time limit, ultrafast III-V semiconductor materials such as low-temperature grown GaAs [ 13 or highly Er-doped M a [2]with picosecond carrier lifetimes have been employed. For ultrafast long-wavelength applications, which have gained particular importance since the emergence of Er-doped fiber amplifiers, InGaAs grown lattice-matched to InP is the material of choice. In this case, however, the procedure of low-temperature growth could not be successhlly implemented thus far to fabricate practically u s e l l ultrafast MSM photodetectors because the resulting material resistivity is fairly pow [3]. An alternative method is ion-implantation. It has been applied previously for obtaining very short carrier recombination lifetimes in photoconductive switches [4]. Here, we shall demonstrate the great potential of ion-implantation for improving the bandwidth of InGaAs MSM photodetectors. The epitaxial layer sequence of the devices under study is grown by LP-MOCVD on semiinsulating InP substrates. It consists of an InP:Fe buffer layer, an 0.7 pm thick InGaAs:Fe absorption layer, and an 30 nm thin InP:Fe cap layer for enhancing the Schottky barrier height. Electron-beam evaporated Pt/Ti/Pt/Au Schottky contacts with interdigitated electrode fingers of 1 pm separation and 0.8 pm width are formed by photolithography. The photoactive area is 18 pm square. The devices are connected to coplanar waveguide transmission lines which have a nominal impedance of 50 Q. Fabricated devices are implanted with nitrogen ions under conditions thiit will be described in detail elsewhere. The device characteristics prior and after implantation are measured ,,on-wafer" under top-side illumination. The dark current (at 6.5 V bias) is observed to increase from typically 100 nA to about 10 pA as a consequence of implantation. The cw-quantum yield at 1.55 pm wavelength decreases fi-om about 25% to 0.25% indicating that the caiiier lifetime is drastically reduced through the implantation. High-frequency circuit properties are assessed by measurement of the SI]-parameter in the range fiom 50 MHz to 40 GHz. S I ] is obseived to remain unaffected by the ion-bombardment. Moreover, it is independent of the applied bias voltage. Fitting of the data to a

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Ultra-wide-band (>40 GHz) submicron InGaAs metal-semiconductor-metal photodetectors

Cited by 18 publications

References 5 publications

Physical modeling of a novel barrier‐enhanced quantum‐well photodetector device for optical receivers

Physical modeling of a novel barrier‐enhanced quantum‐well photodetector device for optical receivers

High-speed integrated photodetectors for 40-Gbit/s applications

Ultrafast ion-implanted InGaAs metal-semiconductor-metal photodetectors

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