Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation

Пономарев, Д. С.; Хабибуллин, Р. А.; Клочков, А. Н.; Yachmenev, A. E.; Бугаев, А. С.; Khusyainov, D. I.; Буряков, А.М.; Bilyk, Vladislav; Мишина, Е. Д.

doi:10.1134/s1063782618070175

Cited by 6 publications

(4 citation statements)

References 30 publications

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“…Moreover, they give the opportunity to control the parameters of photoconductive layers, for example, have an impact on bandgap of InGaAs and generation spectrum of the THz radiation. It was demonstrated that introduction of epitaxial strains into the structure is a significantly effective method for decreasing the carrier lifetime while keeping their mobility [34,35].…”

Section: Formation Of Superlattice Heterostructures On the Basis Of Ingaasmentioning

confidence: 99%

New Materials and Structures for Efficient Terahertz (THz) Spectroscopy

Мишина

Buryakov

Пономарев

2021

J. Commun. Technol. Electron.

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The results of developments of materials and structures used for generation and detection of terahertz radiation having applied photoconductive antennas are presented. The developments were carried out in three directions: optimization of parameters of nanoplasmonic antennas, formation of superlattice heterostructures based on InGaAs, and use of layered and two-dimensional semiconductors. The necessity and ways for further improvement in characteristics of the terahertz antennas for expanding the field of application of this radiation in spectroscopy of materials, biomedical diagnostics, metrology, spintronics, wireless communications, etc., are shown.

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Section: Formation Of Superlattice Heterostructures On the Basis Of Ingaasmentioning

confidence: 99%

New Materials and Structures for Efficient Terahertz (THz) Spectroscopy

Мишина

Buryakov

Пономарев

2021

J. Commun. Technol. Electron.

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“…The detailed simulation procedure is given in Ref. [38], while the results of simulation are depicted in Fig. 1.…”

Section: Modeling Of Band Structurementioning

confidence: 99%

“…Its schematic layout is given in Ref. [38]. The second sample (288) had the analogous SL but its In 0.52 Al 0.48 As barrier layers were lattice-mismatched with the In 0.53 Ga 0.47 As photoconductive layers by decreasing the indium mole fraction to In 0.38 Al 0.62 As which resulted in appearance of residual strain in the SL.…”

Section: A Samples Fabricationmentioning

confidence: 99%

“…Lately we fabricated a 30-period SL slightly analogous to that in Ref. [34] but grown on GaAs wafer by means of a metamorphic buffer (MB) which showed the photocarrier relaxation time of τ ∼ 3.4 ps without Be-doping the InGaAs photoconductor [38]. Since the introduction of strain in epitaxial layers leads to increasing of an interface roughness [39,40], in present paper, we combine these two approaches and present a novel-designed strained 30-period InGaAs/InAlAs SL that allows us to obtain an ultrashort photocarrier relaxation time of τ ∼ 1.5 ps at the pump power of 1 mW.…”

Section: Introductionmentioning

confidence: 99%

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Strain-induced InGaAs/InAlAs superlattices for terahertz radiation

Ponomarev,

Yachmenev,

Pushkarev

et al. 2018

Preprint

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We study the influence of residual strain in InGaAs/InAlAs superlattice (SL) on the ultrafast photocarrier dynamics under femtosecond laser excitation. We propose and fabricate a novel-designed strained InGaAs/InAlAs SL which allows us to obtain an ultrashort photocarrier relaxation time of τ ∼ 1.5 ps without Be-doping of the InGaAs photoconductor. We assume two dominant mechanisms to be responsible for a sharp reduction of τ : photocarriers trapping by defect levels in InAlAs barriers and increased photocarriers scattering at InGaAs/InAlAs interface roughness due to residual strain in the SL. The THz time-domain spectroscopic measurements reveal an increase in both emitted THz waveform and spectrum amplitudes with an increase of residual strain in SL. The results might be of considerable interest for accommodating the needs of THz pulsed spectroscopy and imaging in fundamental and applied branches of THz science and technology.

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Enhanced terahertz emission from strain-induced InGaAs/InAlAs superlattices

Пономарев

Gorodetsky

Yachmenev

et al. 2019

Journal of Applied Physics

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We propose, fabricate, and evaluate strain-induced InGaAs/InAlAs superlattice (SL), which can efficiently radiate broadband terahertz (THz) waves. By means of optical pump-probe measurements, we demonstrate ultrashort photocarriers relaxation times of τ∼1.7ps without Be-doping of InGaAs photoconductive layers. We assume two dominant mechanisms to be responsible for a sharp reduction of τ in strained SL, which are photocarriers scattering at InGaAs/InAlAs heterointerface roughness and the decrease in the energy bandgap of InGaAs photoconductive layers due to the residual strain. The THz time-domain spectroscopic measurements reveal the rise in both emitted THz waveform and spectrum amplitudes with an increase of the residual strain in SL, in particular, at the low-frequency region. We refer this to the band structure engineering due to the residual strain in SL—since InGaAs photoconductive layers become compressively strained, this reduces the semiconductor’s energy bandgap, thus more photocarriers can contribute to the THz emission. The results might be of specific interest for the development of portable THz pulsed spectroscopic and imaging systems and other fundamental and applied aspects of the THz science and technology.

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Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation

Cited by 6 publications

References 30 publications

New Materials and Structures for Efficient Terahertz (THz) Spectroscopy

New Materials and Structures for Efficient Terahertz (THz) Spectroscopy

Strain-induced InGaAs/InAlAs superlattices for terahertz radiation

Enhanced terahertz emission from strain-induced InGaAs/InAlAs superlattices

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