One-dimensional nanoscale devices, such as semiconductor nanowires (NWs) and singlewalled carbon nanotubes (SWNTs), have been intensively investigated because of their potential application of future high-speed electronic, optoelectronic, and sensing devices 1-3 .To overcome current limitations on the speed of contemporary devices, investigation of charge carrier dynamics with an ultrashort time scale is one of the primary steps necessary for developing high-speed devices. In the present study, we visualize ultrafast carrier dynamics in nanoscale devices using a combination of scanning photocurrent microscopy and timeresolved pump-probe techniques. We investigate transit times of carriers that are generated near one metallic electrode and subsequently transported toward the opposite electrode based on drift and diffusion motions. Carrier dynamics have been measured for various working conditions. In particular, the carrier velocities extracted from transit times increase for a larger negative gate bias, because of the increased field strength at the Schottky barrier. *Electronic mail: ahny@ajou.ac.kr
2The transit time of the charge carriers is a crucial factor limiting the high frequency response of nanoscale devices; however, traditional radio-frequency measurements are often limited by the high impedance or the RC constants of the devices [4][5][6][7][8] . Alternatively, optical ultrafast measurement techniques have been widely used to investigate charge carrier dynamics with a time resolution determined by the optical pulse width (down to a few femtoseconds) 9 . Recently, researchers have reported visualizing charge carrier movements in free-standing Si NWs using an ultrafast pump-probe imaging technique 10,11 . The carrier diffusion motions induced by a pump pulse located in the middle of the NWs were visualized; however, these optical measurements are limited for interrogating the carrier dynamics in operating devices because they strongly depend on the non-linear properties of materials and they are frequently obscured by the substrate signals. Consequently, these techniques are not ideal for low-dimensional systems with NWs thinner than the optical spot size (<100 nm) or with SWNTs.Scanning photocurrent microscopy (SPCM) techniques have been introduced as powerful tools for investigating local optoelectronic characteristics, such as metallic contacts, defects, interfaces, and junctions [12][13][14][15][16][17][18][19] . We were able to collect localized electronic band information that is not disturbed by signals originating from the substrate, and hence, compared with conventional optical pump-probe techniques, SPCM can provide a higher signal-to-noise ratio. Only recently, ultrafast pump-probe photocurrent techniques have been demonstrated for studying carrier dynamics in carbon nanotube devices by using a collinear pump and probe beams, focused at the same position 20,21 . In addition, ultrafast phenomena in graphene and GaAs NWs have been investigated by measuring terahertz radiation that results from...