Ultrafast Ionizing Radiation Detection by p–n Junctions Made with Single Crystals of Solution‐Processed Perovskite

Wang, Xin; Wu, Yao Ting; Li, Guanwen; Zhang, Xiaobing; Li, Qing; Wang, Baoping; Chen, Jing; Lei, Wei

doi:10.1002/aelm.201800237

Cited by 36 publications

(25 citation statements)

References 35 publications

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“…The value is comparable to previous Xray detectors based on perovskite single crystals, [23][24][25] and is 3 times higher than that of α-Se detectors under direct detection. [26] The sensitivity is still lower than that of some perovskite-based direct X-ray detector, such as single crystal perovskite, [27][28][29][30][31] quantum dots, [32] perovskite wafer, [33] 2D hybrid perovskite, [34] and polycrystalline perovskite, [35] which shows a sensitivity of ~10 3 to 10 4 μC Gyair -1 •cm 2 ). The state-of-the-art a-Si:H based indirect x-ray detector can be used well below 10 nGyair, in which the detective quantum efficiency (DQE) is above 45% at 5 nGyair and 1 lp/mm.…”

Section: Resultsmentioning

confidence: 96%

Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection

Zou

Ben

et al. 2021

IEEE J. Electron Devices Soc.

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The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metaloxide-semiconductor CMOS circuit is a key step towards prototyping perovskite-based image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a two-step deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm-2 , and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2  10 2 μC mGyair-1 cm-3. Theoretically, with a stateof-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as 10 μGyair s-1. This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager.

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Section: Resultsmentioning

confidence: 96%

Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection

Zou

Ben

et al. 2021

IEEE J. Electron Devices Soc.

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“…8) to apply voltage to the photodiode, and the SEM images can reveal the counts of secondary electrons of the photodiode surface, as shown in Fig. 3d [48][49][50] . Fig.…”

Section: Resultsmentioning

confidence: 99%

Low-noise X-ray PIN photodiodes made of perovskite single crystals by Solution-processed doped epitaxial growth

Wang¹,

Xu²,

Pan³

et al. 2020

Preprint

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X-ray photodiodes made of metal halide perovskites (MHPs) which directly convert X-ray photons into electron-hole pairs have shown advantages in low-cost and high X-ray detection sensitivity. However, devices fabricated by spin-coating and evaporation methods suffer from high traps density near poor interfacial layers (n-type/intrinsic and p-type/intrinsic) which lead to high dark current and noise current under large reverse bias. In this work, solution-processed doped epitaxial growth is employed to limit these traps through epitaxially growing n-type MHPs (bismuth-doped) and p-type MHPs (silver-doped) on opposite faces of intrinsic CH3NH3PbBr2.5Cl0.5 MHP single crystals. Through energy structure design, effective electron/hole blocking layers could decrease the noise and dark current, these X-ray PIN photodiodes work under a large external electrical field, which enables a state-of-art response speed (fall) of 750 ns and a lowest detectable dose rate of 17.7 nGys-1(40 kVp). This work will motivate new strategies to fabricate high-performance devices based on perovskites using solution-processed methods. These founding also explore a new generation of low dose and high dynamic X-ray detectors based on MHPs.

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“…The μτ product can be extrapolated from the voltage dependence of the photocurrent under gamma irradiation according to the Hecht equation [ 11,48 ]

\begin{matrix} true \\ right I = \frac{I_{0} μ τ V}{L^{2}} \frac{1 - e^{(- \frac{L^{2}}{μ τ V})}}{1 + \frac{L s}{V μ}} \end{matrix}

where I 0 is the saturated photocurrent, L is the thickness, V is the applied voltage, and s represents the surface recombination velocity that directly affects the charge collection efficiency. For all the fabricated devices, the IV characteristics were acquired when exposed to a 2.3 Gy h −1 gamma dose‐rate from a 60 Co source, in the applied voltage range of 0–100 V and fitted according to (Equation ()).…”

Section: Methodsmentioning

confidence: 99%

Kilogram‐Scale Crystallogenesis of Halide Perovskites for Gamma‐Rays Dose Rate Measurements

et al. 2020

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Gamma‐rays (γ‐rays), wherever present, e.g., in medicine, nuclear environment, or homeland security, due to their strong impact on biological matter, should be closely monitored. There is a need for simple, sensitive γ‐ray detectors at affordable prices. Here, it is shown that γ‐ray detectors based on crystals of methylammonium lead tribromide (MAPbBr3) ideally meet these requirements. Specifically, the γ‐rays incident on a MAPbBr3 crystal generates photocarriers with a high mobility‐lifetime product, allowing radiation detection by photocurrent measurements at room temperatures. Moreover, the MAPbBr3 crystal‐based detectors, equipped with improved carbon electrodes, can operate at low bias (≈1.0 V), hence being suitable for applications in energy‐sparse environments, including space. The γ‐ray detectors reported herein are exposed to radiation from a 60Co source at dose rates up to 2.3 Gy h−1 under ambient conditions for over 100 h, without any sign of degradation. The excellent radiation tolerance stems from the intrinsic structural plasticity of the organic–inorganic halide perovskites, which can be attributed to a defect‐healing process by fast ion migration at the nanoscale level. The sensitivity of the γ‐ray detection upon volume is tested for MAPbBr3 crystals reaching up to 1000 cm3 (3.3 kg in weight) grown by a unique crystal growth technique.

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Ultrafast Ionizing Radiation Detection by p–n Junctions Made with Single Crystals of Solution‐Processed Perovskite

Cited by 36 publications

References 35 publications

Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection

Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection

Low-noise X-ray PIN photodiodes made of perovskite single crystals by Solution-processed doped epitaxial growth

Kilogram‐Scale Crystallogenesis of Halide Perovskites for Gamma‐Rays Dose Rate Measurements

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