Ultrafast, Kinetically Limited, Ambient Synthesis of Vanadium Dioxides through Laser Direct Writing on Ultrathin Chalcogenide Matrix

Wang, Bolun; Peng, Ruixuan; Wang, Xuewen; Yang, Yueyang; Wang, Enze; Xin, Zeqin; Sun, Yan; Li, Chenyu; Wu, Yonghuang; Wei, Jinquan; Sun, Jingbo; Li, Kai

doi:10.1021/acsnano.1c03050

Cited by 25 publications

(29 citation statements)

References 70 publications

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“…[63] This synthetic strategy without complex equipment broaden the way in preparing 2D metal oxides semiconductor materials. [158][159][160][161] Subsequently, a liquid metal-based reaction route had been exploited to synthesize 2D materials including Ga 2 O 3 , [162][163][164] GaN, [28,72] Bi 2 O 3 , [165] PbO, [166] SnO, [145] ITO, [146] IZO, [118] β-TeO 2 , [66] SnO, [145] ZnO, [113] V 2 O 5 , [167] SnO 2 , [126] and ZnO. [147] Recently, Daeneke' group reported a modified liquid metal roll-printing technique for synthesis 2D p-type β-TeO 2 nanosheet.…”

Section: Top-down Methodsmentioning

confidence: 99%

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

et al. 2022

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Over the past decades, UWBG semiconductors employed in (opto)electronics are dominated by the traditional bulk materials, which have been extensively investigated and widely commercialized, such as Ga 2 O 3 , [1][2][3][4] diamond, [5][6][7] Mg x Zn 1-x O, [8] indium tin oxide (ITO), [9] indium gallium zinc oxide (IGZO), [10] III-nitride (GaN, AlN, Al x Ga 1-x N). [11] Furthermore, various methods have been used to improve devices performance via extensive research efforts, such as localized surface plasmon, [12,13] bandgap engineering, [14,15] array, [16][17][18] heterojunction. [19][20][21][22][23] However, in the post-Moore era, the traditional UWBG semiconductor devices with large size, high power and high cost cannot meet the future requirements of high-performance (opto)electronic devices. [24,25] In this regard, desingings of low-dimensional semiconductor material systems with novel structure and good adaptability have become a research hotspot.Successful exfoliation of graphene [38] in 2004 has tremendously boosted research on various 2D materials, including transition metal dichalcogenides (TMDs), [39][40][41][42][43][44][45] black phosphorous (b-P), [46][47][48] black arsenic (b-As), [49,50] phosphorous compounds, [51,52] hexagonal boron nitride (h-BN), [53][54][55][56] and Mxene. [57] Compared to devices based on narrow bandgap semiconductors, ultraviolet photodetectors based on 2D UWBG semiconductors need not costly high-pass optical filters to block out visible and infrared photons and without cooled to reduce dark current, leading to a significant loss of effective area of the system. Hence, the emergence of devices based on 2D ultrawide bandgap semiconductors has opened up an avenue to circumvent the dilemma mentioned above.The group metal chalcogenides (GaS, GaSe) are known for wide-range bandgap and are among the first to be investigated. [58,59] Then, the study quickly expand to other chalcogenide and has further inspired attention on other compounds, such as metal oxyhalides, metal nitrides, metal oxides, and Dion-Jacobson perovskite oxides. [28,[33][34][35][60][61][62][63][64][65][66][67][68][69][70][71][72][73][74] Atomically thin 2D UWBG semiconductor materials have sky-rocketing developed into a unique subdiscipline in the last decade, offering new possibilities for designing and fabricating (opto)electronic devices with novel functionalities at the nanoscale (Figure 1). Up to date, studies on 2D 2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investiga...

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Section: Top-down Methodsmentioning

confidence: 99%

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

et al. 2022

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“…[ 16 ] However, the researchers have found that the electric field has obvious obstacles, such as single function, weakness expansion, and device vulnerability, even though it is facile to control. [ 33 , 34 , 35 , 36 , 37 , 38 ] To extend the application of the memristors, additional external stimuli are introduced, such as magnetic field, [ 39 , 40 , 41 , 42 , 43 ] temperature, [ 44 , 45 ] external pressure, [ 46 ] etc. In particular, these stimuli are orthogonal with the electric field when operating the memristor.…”

Section: Introductionmentioning

confidence: 99%

Advances in Emerging Photonic Memristive and Memristive‐Like Devices

et al. 2022

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Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.

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“…As one of the most common lasers, carbon dioxide (CO 2 ) laser has been widely used in food, medicine, machinery and electronics, aerospace, and other fields with the characteristics of low-cost, simple operation, and high photothermal conversion efficiency. − The interaction between CO 2 laser and materials is mainly manifested as the thermal effect, which can be used in the surface treatment, cutting, patterning, and perforation of materials. − Recently, laser direct writing (LDW) as new technology has been widely used for the surface patterning of metals, ceramics, plastics, and other materials. LDW exhibits great potential in designing patterns, especially for polymers, in that the high-energy laser beam irradiates the materials to generate instantaneous high temperature, leaving permanent patterns on the polymers’ surface by carbonization, discoloration, vaporization, or foaming. − Typical applications are to make logos, images, texts, two-dimensional codes, or barcodes to ensure the identification and traceability of various commodities.…”

Section: Introductionmentioning

confidence: 99%

Achieving Rewritable Fluorescent Patterning on Dye-Doped Polymers Using Programmable Laser Direct Writing

Peng

Chen

et al. 2022

Ind. Eng. Chem. Res.

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There is an urgent need to broaden the new horizons of laser direct writing (LDW). Herein, the programmable rewritable laser fluorescent patterning on polymers was realized by doping dyes and CO 2 laser LDW for the first time. The prepared fluorescent patterns had high brightness and high precision under 365 nm UV light. Importantly, the designed patterns could repeatedly be rewritten using CO 2 laser. A series of poly(methyl methacrylate) (PMMA) doped with quinacridone (DClQA) dye were prepared to perform CO 2 laser LDW and characterizations. Attenuated total reflection-Fourier transform infrared (ATR-FTIR) spectroscopy revealed no generation of new compounds after LDW. Thermogravimetric analysis−Fourier transform infrared−gas chromatography−mass spectroscopy (TGA-FTIR-GC-MS) indicated that the samples could be decomposed into complex products at high temperatures, and it also revealed no generation of any fluorescent substances. We confirmed the mechanism of the laser-induced fluorescence is that the dissociated DClQA molecules caused by the CO 2 laser are more inclined to form hydrogen bonds with PMMA macromolecules, so that they cannot be restacked and recrystallized, leading to the disappearance of the intrinsic fluorescence quenching phenomenon of DClQA; thus, the fluorescence is naturally emitted. Benefiting from high precision, rewritable, and programmability, laser fluorescent patterning will have good application prospects in the field of polymer products anticounterfeiting.

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Ultrafast, Kinetically Limited, Ambient Synthesis of Vanadium Dioxides through Laser Direct Writing on Ultrathin Chalcogenide Matrix

Cited by 25 publications

References 70 publications

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

Advances in Emerging Photonic Memristive and Memristive‐Like Devices

Achieving Rewritable Fluorescent Patterning on Dye-Doped Polymers Using Programmable Laser Direct Writing

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