Silicon (Si)-based
integrated photonics is considered
to play a
pivotal role in multiple emerging technologies, including telecommunications,
quantum computing, and lab-chip systems. Diverse functionalities are
either implemented on the wafer surface (“on-chip”)
or recently within the wafer (“in-chip”) using laser
lithography. However, the emerging depth degree of freedom has been
exploited only for single-level devices in Si. Thus, monolithic and
multilevel discrete functionality is missing within the bulk. Here,
we report the creation of multilevel, high-efficiency diffraction
gratings in Si using three-dimensional (3D) nonlinear laser lithography.
To boost device performance within a given volume, we introduce the
concept of effective field enhancement at half the Talbot distance,
which exploits self-imaging onto discrete levels over an optical lattice.
The novel approach enables multilevel gratings in Si with a record
efficiency of 53%, measured at 1550 nm. Furthermore, we predict a
diffraction efficiency approaching 100%, simply by increasing the
number of levels. Such volumetric Si-photonic devices represent a
significant advance toward 3D-integrated monolithic photonic chips.