Ultrafast Removal of LO-Mode Heat From a GaN-Based Two-Dimensional Channel

Matulionis, A.; Liberis, J.; Matulionienė, I.; Ramonas, M.; Šermukšnis, E.

doi:10.1109/jproc.2009.2029877

Cited by 36 publications

(69 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As mentioned earlier, the hot-phonon lifetime reaches the minimum value and the associated resonance takes place at the electron sheet density near 7×10 12 cm -2 at low electric fields in GaN 2DEG channels [20]. The drift velocity in the coupled channel can be high because it has a similar electron density (6-7×10 12 cm -2…”

Section: Drift Velocity Optimal Conditions For Hfet Frequency Performentioning

confidence: 79%

“…For example, application of a high field can reduce 3D density and make the profile closer to the resonance one. Calculations reveal the reduced 3D peak density at elevated hot-electron temperature [20], which in turn has an impact on the associated LOphonon-plasmon resonance. However, it might not be practical to heat the electrons sufficiently in order to reduce their peak density to the resonance one without damaging the sample.…”

Section: ×10mentioning

confidence: 98%

See 1 more Smart Citation

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Ardaravičius¹,

Kiprijanovič²,

Liberis³

2017

Lith. J. Phys.

Self Cite

View full text Add to dashboard Cite

Longitudinal hot-electron transport is investigated for the alloy-free AlGaN/AlN/{GaN/AlN/GaN} heterostructure at electric fields up to 380 kV/cm. The structure featured a coupled channel with a camelback electron density profile. The hot-electron drift velocity in the coupled channel is estimated as ~1.5×10 7 cm/s and is ~50% higher as compared with the standard AlN-spacer GaN 2DEG channel. The HFET with the pristine 2DEG density of 1.75×1013 cm -2 confined in the coupled channel demonstrates the optimal frequency performance in terms of electron velocity at a relatively low gate bias of V GS = -1.75 V. These results are consistent with the ultra-fast decay of hot phonons.

show abstract

Section: Drift Velocity Optimal Conditions For Hfet Frequency Performentioning

confidence: 79%

Section: ×10mentioning

confidence: 98%

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Ardaravičius¹,

Kiprijanovič²,

Liberis³

2017

Lith. J. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The results on hot-phonon lifetime are available for nitride-based 2DEG channels [6,11,16,[20][21][22][23], arsenide-based 2DEG channels [24], SiO 2 /Si/SiO 2 channels [25], and SiC [26]. For recent reviews see [10][11][12][27][28][29].…”

Section: Methods Assumptions and Proceduresmentioning

confidence: 99%

“…(6) becomes of special importance when the lifetime depends on supplied power. The corresponding experimental data [6,10,11,23,28] for GaN 2DEG channels will be discussed later. Dependence of hot-phonon mode occupancy on supplied electric power for 2DEG channels: AlGaN/AlN/GaN (squares, after [20]) and InAlN/AlN/GaN (stars [11]).…”

Section: Methods Assumptions and Proceduresmentioning

confidence: 99%

“…The conversion of the LO-mode heat into the LA-mode heat can be treated in terms of LO-phonon lifetime, associated with the decay of the LO phonons into other modes, for example, transverse optical (TO) and (mobile) LA modes through the route LO TO+LA proposed for GaN some time ago [9]. In nitride 2DEG channels, the exact route of LO-phonon decay is not clearly understood but there is compelling experimental [6,[10][11][12] and theoretical [13] evidence that plasmon-assisted process tends to dominate.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Limitation of Hot-Carrier Generated Heat Dissipation on the Frequency of Operation and Reliability of Novel Nitride-Based High-Speed HFETs

Matulionis¹

2010

Self Cite

View full text Add to dashboard Cite

Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information , 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. (From -To) 15 REPORT DATE (DD-MM-YYYY) 19-07-2010 REPORT TYPE Interim Report DATES COVERED PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)Semiconductor Physics Institute A. Gostauto 11 Vilnius, Lithuania 2600 PERFORMING ORGANIZATION REPORT NUMBERN/A SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)EOARD Unit 4515 BOX 14 APO AE 09421 SPONSOR/MONITOR'S ACRONYM(S)AFRL/AFOSR/RSW (EOARD) SPONSOR/MONITOR'S REPORT NUMBER(S)AFRL-AFOSR-UK-TR-2011-0013 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. SUPPLEMENTARY NOTES ABSTRACTA novel fluctuation-based approach is applied to consider the unsolved problems in the realm of nitride heterostructure field effect transistors (HFETs). Fluctuations originate at a microscopic level and provide information on the processes responsible for device operation and degradation. The novel fluctuation-based approach is impelled by recent demonstration of strong correlation of microwave hot-electron fluctuations with frequency performance and degradation of nitride HFETs. The correlation has its genesis in the dissipation of the LO-mode heat accumulated by the non-equilibrium longitudinal optical phonons (hot phonons) confined in the channel that hosts the high-density hot-electron gas subjected to a high electric field. The LO-mode heat causes additional scattering of hot electrons and facilitates defect formation in a different manner than conventional heat accumulated by acoustic phonons. The heat accumulation depends on the supplied electric power and the rate of heat dissipation. We treat the problem in terms of the hot-phonon lifetime responsible for conversion of non-migrant optical phonons into migrant modes. The lifetime is measured over wide ranges of electron densities and supplied electric power. The optimal conditions for heat dissipation are determined and associated with plasmon-assisted disintegration of LO phonons. Signatures of plasmons are experimentally resolved in fluctuations, dissipation, hot-electron transport, transistor frequency performance, and device reliability. In particular, a slower degradation and a faster operation of GaN-based HFETs is demonst...

show abstract

New twists in LEDs and HFETs based on nitride semiconductors

Leach

Lee

et al. 2010

Physica Status Solidi (a)

View full text Add to dashboard Cite

Despite notable progress in light-emitting and charge transport devices based on GaN heterostructures containing In, there is still controversy as to the light emission characteristics at high injection levels in InGaN-based light-emitting diodes (LEDs) and hot-carrier scattering in GaN-based field effect transistors (FETs) with AlGaN or AlInN barriers. For LEDs to be inserted into conventional lighting systems, reasonably high efficiencies would have to be retained at high injection levels to meet intensity requirements which is not yet borne out by many experiments but might be mitigated by use of nonpolar m-plane varieties according to the most recent data. The efficiency degradation at high injection levels, beyond that which is expected due to heating and current crowding, has been attributed by what is shaping up to be two camps to mainly Auger recombination and carrier spillover. The latter has been attributed to or helped by polarization-induced fields which is contrary to again recent experiments on LEDs. In terms of the FETs the conventional wisdom of increased carrier concentrations leading to better devices does not seem to hold beyond a certain point. This is due to strong electron LO phonon coupling in this highly ionic material and the resultant hot phonon population. Hot phonon lifetime decreases with increasing carrier concentration up to a point owing to plasmon-phonon interaction. But beyond the concentration at which the plasma frequency and phonon frequency match, the phonon lifetime begins to increase again. Increased phonon lifetimes lead to reduced carrier velocity and inefficient heat transfer, and thus performance degradation ensues. Another intriguing feature is that the aforementioned phenomenon is electric field dependent at least because increased field in FETs means widening of the channel and thus for the same volume density the resonance occurs at higher sheet densities. In this paper the details of carrier recombination in the context of InGaN LEDs both on polar c-plane and nonpolar m-plane GaN at high injection levels, and hot-carrier-scattering-related physics in the context of HFETs based on the GaN material family containing In will be elucidated.

show abstract

Ultrafast Removal of LO-Mode Heat From a GaN-Based Two-Dimensional Channel

Cited by 36 publications

References 26 publications

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Limitation of Hot-Carrier Generated Heat Dissipation on the Frequency of Operation and Reliability of Novel Nitride-Based High-Speed HFETs

New twists in LEDs and HFETs based on nitride semiconductors

Contact Info

Product

Resources

About