Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices

Abstract

The gamma-ray blazar 1611+343 was observed with polarization VLBI mode at 5 GHz in February 1999. The total intensity (I) VLBI image of the source shows a core-jet structure. The jet bends eastward at ∼ 3 mas south of the core. Four components have been detected from results of fitting, with apparent speeds estimated at 6.7 ± 0.7, 2.5 ± 0.3, 4.5 ± 0.5 h −1 c for three jet components (taking H 0 = 100 h km s −1 Mpc −1 , q 0 = 0.5). The polarization (P ) VLBI image of 1611+343 displays the polarized configuration in the jet. The mechanism of the curved jet is discussed.

Young’s Double-Slit Interference Observation of Hot Electrons in Semiconductors

“…We proposed a double-slit interference experiment on the hot electron [17] and attempted interference observation, for the first time, by magnetic field steering [18]. The collector current was modulated by 1% and showed a clear minimum at zero magnetic field, in agreement with the theory.…”

First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance

“…It was con- firmed that tungsten fulfilled this requirement. 7,8) Thus, we selected tungsten for the buried metal. When a metal embedded in semiconductor is used for the electron devices, no void formation around the buried metal and a flat top surface are required.…”

Double-Slit Interference Observation of Hot Electrons in Semiconductors–Analysis of Experimental Data–

“…After the proposed experiment on the observation of the electron diffraction of hot electrons in a semiconductor by the combined use of the precise crystal growth technique and ultrafine fabrication process, 20) continuous efforts have been made to improve this technique and process. Interference observation was attempted for the first time, by magnetic field steering.…”