The Schottky source/drain metal-oxide-semiconductor field-effect transistor (MOSFET) has potential for scaling to the nanometer regime, because low electrode resistances with very shallow extension can be realized using metal source/drain. In this study, very short channel n- and p-type Schottky source/drain MOSFETs with silicon-on-insulator (SOI) structure were analyzed theoretically, and n-type devices were demonstrated experimentally. It was shown theoretically that a drivability of the Schottky source/drain MOSFET comparable to that of conventional MOSFETs can be realized with a low Schottky barrier height. The short-channel effect can be suppressed even with a 15-nm-long channel at t OX = 1 nm and t SOI = 3 nm. The room-temperature operation of sub-50-nm n-type ErSi2 Schottky source/drain MOSFETs on a separation by implanted oxygen (SIMOX) substrate was demonstrated.

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We demonstrate a SiC trench MOSFET with an integrated low Von unipolar heterojunction diode (MOSHJD). A region of the heterojunction diode (HJD) was fabricated in a trench with p+-type poly-crystalline silicon on an n--type epitaxial layer of 4H-SiC. The measured on-resistance (Ron) of the transistor action was 15 mΩcm2. The measured Von of the diode action was 2.2 V at a forward current density of 100 A/cm2. The fabrication process of the MOSHJD is simple. First, the trenches of the MOSFET region and the HJD region are formed simultaneously; then poly-crystalline silicon is deposited to form the gate electrode of the MOSFET region and the anode electrode of the HJD region at the same time.

We demonstrate a heterojunction diode (HJD) fabricated with p + -type polycrystalline silicon on an n --type epitaxial layer of 4H-SiC. The HJD achieved extremely low V on and high reverse blocking voltage compared with a SiC Schottky barrier diode (SBD). The HJD shows good diode characteristics for temperatures ranging up to 200°C. Measured switching characteristics of the HJD exhibit almost zero reverse recovery similar to that of the SBD.

Therefore, the progress of technology is strongly needed