The Schottky source/drain metal-oxide-semiconductor field-effect transistor (MOSFET) has potential for scaling to the nanometer regime, because low electrode resistances with very shallow extension can be realized using metal source/drain. In this study, very short channel n- and p-type Schottky source/drain MOSFETs with silicon-on-insulator (SOI) structure were analyzed theoretically, and n-type devices were demonstrated experimentally. It was shown theoretically that a drivability of the Schottky source/drain MOSFET comparable to that of conventional MOSFETs can be realized with a low Schottky barrier height. The short-channel effect can be suppressed even with a 15-nm-long channel at t OX = 1 nm and t SOI = 3 nm. The room-temperature operation of sub-50-nm n-type ErSi2 Schottky source/drain MOSFETs on a separation by implanted oxygen (SIMOX) substrate was demonstrated.

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We study the stability of Ga 0.5 In 0.5 P and Al 0.4 Ga 0.6 As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga 0.5 In 0.5 P or Al 0.4 Ga 0.6 As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga 0.5 In 0.5 P barrier layer is more stable than the Al 0.4 Ga 0.6 As layer at higher oxidation temperatures and longer periods of oxidation time.

We report the observation of multiple negative differential resistance (NDR) in nanometer-thick metal (CoSi2)/insulatro (CaF2) resonant tunneling hot electron transistor (RHET) grown on a silicon substrate. In this transistor, electrons from a resonant tunneling emitter with a 2.2-nm-thick CoSi2 quantum well are transferred to the conduction band of a 4.0-nm-thick CaF2 collector barrier region. Multiple NDR observed here may be attributed to the modulation of the transmission probability of electron waves due to quantum interference in the conduction band of the insulator (CaF2) collector barrier layer between two metal (CoSi2) layers, which is a different mechanism from the resonance in quantum wells previously reported.