Ultrahigh Capacitance Density for Multiple ALD-Grown MIM Capacitor Stacks in 3-D Silicon

Klootwijk, J.H.; Jinesh, K. B.; Dekkers, Wouter; Verhoeven, Jfc; Heuvel, F.C. van den; Kim, H.-D.; Blin, D.; Verheijen, Marcel A.; Weemaes, R. G. R.; Kaiser, M.; Ruigrok, J.J.M.; Roozeboom, F.

doi:10.1109/led.2008.923205

Cited by 141 publications

(97 citation statements)

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“…Thin alumina layers are used as dielectrics in integrated capacitors with ultrahigh capacitance density. 2 Films of Al 2 O 3 are also considered as replacements for SiO 2 in semiconductor devices. 3,4 The conventional anodization methods allow production of alumina films of controlled thickness and quality.…”

Section: Introductionmentioning

confidence: 99%

Anodic Alumina Films Prepared by Powerful Pulsed Discharge Oxidation

et al. 2011

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Section: Introductionmentioning

confidence: 99%

Anodic Alumina Films Prepared by Powerful Pulsed Discharge Oxidation

et al. 2011

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“…[ 2 ] Moreover, the use of nanostructures, such as Si nanotrenches, anodized aluminum oxide (AAO), and self-rolling metallic structures, could substantially increase the capacitance per projected area and the resulting energy storage. [4][5][6] Figure 1 a shows a schematic diagram of the energy storage behavior of antiferroelectric (AFE) materials together with their polarization-electric fi eld ( P -E ) hysteresis curves. The blue area refers to the recoverable part of the stored energy, which is called energy storage density (ESD), and the green area refers to the unrecoverable loss due to the polarization switching.…”

mentioning

confidence: 99%

Thin Hf_xZr_1‐xO₂ Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

Park

Kim

et al. 2014

Advanced Energy Materials

316

204

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still smaller than that of electrochemical capacitors due mainly to the use of the low dielectric constant ( ε r ) Al 2 O 3 thin fi lm as the dielectric layer ( ε r ≈ 9). The concurrent high-power capacitors are made mainly of linear dielectric polymers with an ESD of ≈1-2 J cm −3 . [ 3 ] Although the ε r values of linear dielectric polymers are generally small (≈2-5), their electric breakdown fi elds are quite high, thereby allowing the application of high voltages, which result in a relatively high ESD. [ 3 ] Nonetheless, their ESD values are not high enough, so many other materials have been studied for the purpose. Most previous research on this topic focused on AFE Pb(Zr,Ti)O 3 (PZT)-based fi lms because their ESD values are as large as ≈1 and ≈10-15 J cm −3 for bulk and thin fi lms, respectively. [ 3 ] An ESD value as high as ≈50 J cm −3 has been reported for thin PZT-based fi lms when a large ≈3.5 MV cm −1 electric fi eld was applied. [ 7,8 ] However, such a high electric fi eld may induce a signifi cant reliability concern for PZT fi lms. [ 9 ] In addition, the commercial use of PZT is restricted in many countries due to its environmental impact. Another signifi cant problem with PZT thin fi lms is the decrease in their ESD value by ≈20-40% when their operating temperature increases to 150 °C. [ 10,11 ] Other candidate materials are FE poly(vinylidenefl uoride) (PVDF)-based materials, which can have a large breakdown fi eld and maximum polarization. The highest ESD value of FE PVDF-based fi lms has been reported to be as high as ≈20 J cm −3 when a ≈8 MV cm −1 electric fi eld was applied. [ 3 ] However, the problem with such fi lms is that their ESD is only ≈40% of their total stored energy because PVDF is an FE material meaning that ≈60% of the total stored energy is retained in the material. The presence of remanent polarization ( P r ) prohibits the full discharge of the stored charges in any FE material. [ 3 ] In the case of AFE PVDF-based fi lms, an ESD value of ≈14 J cm −3 has been reported with a higher effi ciency of ≈70%. [ 12 ] 3D nanostructures, such as nanoholes or nanotrenches, would be needed to eventually contain an even higher ESD for practical use in electric vehicles. [ 5 ] However, both PZT-and PVDF-based materials are inappropriate for such nanostructures because they are too thick (thickness ( t f ) ≈ 10 2 -10 4 nm) to be incorporated into nanoscale structures. Therefore, a dielectric material that has an ESD value as high as that of PZT and PVDF with a high breakdown fi eld at a fi lm thickness of less than ≈10 nm must be found. The fi lm must also be well grown using the facile atomic layer deposition (ALD) technique to ensure fl uent step coverage with atomic accuracy in thickness control.FE and AFE HfO 2 -based thin fi lms with various dopants, such as Si, Al, and Zr, were recently reported, where the conventional Useful energy sources and ways to effi ciently distribute energy have been extensively studied. With the development of new energy generation and handling technologies, h...

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“…In order to develop advanced MIM capacitor, the use of a high-k material is a better solution. Several of high-k dielectric materials have been proposed to be included in the MIM capacitors to increase the capacitance and reduce the leakage current [8]- [12]. The first factor to achieve the high capacitance is by using high-k dielectric materials, such as Al 2 O 3 and HfO 2 which are widely used due to their high capacitance density, good thermal stability and high energy bandgap [13]- [17].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors

Zulkifeli

Sabki

Taking

et al. 2017

IJECE

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A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor's performance is the design and the dielectric materials used. In this study, MIM capacitors are simulated using different dielectric materials and different number of dielectric layers from two layers up to seven layers. The effect of the different dielectric constants (k) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect of using low-k and high-k dielectric materials. The dielectric materials used in this study with high-k are Al 2 O 3 and HfO 2 , while the low-k dielectric materials are SiO 2 and Si 3 N 4 . The results demonstrate that the dielectric materials with high-k produce the highest capacitance. Results also show that metal-Al 2 O 3 interfaces increase the performance of the MIM capacitors. By increasing the number of dielectric layers to seven stacks, the capacitance and breakdown voltage reach its highest value at 0.39 nF and 240 V, respectively.

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Ultrahigh Capacitance Density for Multiple ALD-Grown MIM Capacitor Stacks in 3-D Silicon

Cited by 141 publications

References 9 publications

Anodic Alumina Films Prepared by Powerful Pulsed Discharge Oxidation

Anodic Alumina Films Prepared by Powerful Pulsed Discharge Oxidation

Thin Hf_xZr_1‐xO₂ Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors

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Ultrahigh Capacitance Density for Multiple ALD-Grown MIM Capacitor Stacks in 3-D Silicon

Cited by 141 publications

References 9 publications

Anodic Alumina Films Prepared by Powerful Pulsed Discharge Oxidation

Anodic Alumina Films Prepared by Powerful Pulsed Discharge Oxidation

Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors

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Thin Hf_xZr_1‐xO₂ Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability