Ultrahigh efficiency microwave signal transmission using tandem-contact single quantum well GaAlAs lasers

Moore, Nathaniel; Lau, Kam Y.

doi:10.1063/1.101729

Cited by 47 publications

(43 citation statements)

References 6 publications

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“…The gain-lever effect has been extensively studied [5]- [13], especially in the context of electrical amplitude modulation in split electrode lasers. Vahala, Newkirk, and Chen [14] also show an optical gain lever in GRINSCH lasers.…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical gain lever effects in InGaAs double quantum-well diode lasers

Pocha

Goddard

Bond

et al. 2007

IEEE J. Quantum Electron.

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Abstract-In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.

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Section: Introductionmentioning

confidence: 99%

Electrical and optical gain lever effects in InGaAs double quantum-well diode lasers

Pocha

Goddard

Bond

et al. 2007

IEEE J. Quantum Electron.

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“…Improvement in optical modulation depth is also observed in such devices due to gain lever effect [7][8][9][10][11][12][13][14][15]. The inherent nonlinearity of the two section gain lever laser diode also produces harmonic and intermodulation distortion.…”

Section: Introductionmentioning

confidence: 93%

“…Gain lever effect has been realized in two section bulk and MQW laser diodes in order to improve the optical modulation depth (amplitude modulation efficiency), leading to an improvement in RF link efficiency [7,8]. A two section laser diode with longer (a 1 ) and shorter (a 2 ) active regions is shown in Fig.…”

Section: Gain Lever Effect In Two Section Laser Diodementioning

confidence: 99%

Analysis of the effect of optical confinement factor on the distortion performance of gain lever laser diode

Piramasubramanian

Madhan

2015

Optik

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“…Figure 1 illustrates the principle of gain-lever modulation. GaAlAs/GaAs single quantum well [5,6] and InGaAsP/InP multiple quantum well [7] gain-lever lasers have been demonstrated. Unfortunately, the improved amplitude modulation (AM) efficiency is obtained at the expense of linearity.…”

Section: Fig 2 Schematic Of Distributed Bragg Reflector (Dbr)mentioning

confidence: 99%

“…Several approaches have been proposed to increase the modulation efficiency of semiconductor lasers, including gain-lever modulation [5][6][7] and cascaded lasers [8][9][10][11]. Cascaded lasers achieve higher efficiency by recycling the RF modulating current through multiple lasers connected in series.…”

Section: Introductionmentioning

confidence: 99%

Amplitude Modulation Response and Linearity Improvement of Directly Modulated Lasers Using Ultra-Strong Injection-Locked Gain-Lever Distributed Bragg Reflector Lasers

Sung

2008

Journal of the Optical Society of Korea

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Directly modulated fiber-optic links generally suffer higher link loss and larger signal distortion than externally modulated links. These result from the electron-photon conversion loss and laser modulation dynamics. As a method to overcome the drawbacks, we have experimentally demonstrated the RF performance of directly modulated, ultra-strong injection-locked gain-lever distributed Bragg reflector (DBR) lasers. The free-running DBR lasers exhibit an improved amplitude modulation efficiency of 12.4 dB under gain-lever modulation at the expense of linearity. By combining gain-lever modulation with ultra-strong optical injection locking, we can gain the benefits of both improved modulation efficiency from the gain-lever effect, plus improved linearity from injection locking. Using an injection ratio of R=11 dB, a 23.4-dB improvement in amplitude response and an 18-dB improvement in spurious-free dynamic range have been achieved.

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Ultrahigh efficiency microwave signal transmission using tandem-contact single quantum well GaAlAs lasers

Cited by 47 publications

References 6 publications

Electrical and optical gain lever effects in InGaAs double quantum-well diode lasers

Electrical and optical gain lever effects in InGaAs double quantum-well diode lasers

Analysis of the effect of optical confinement factor on the distortion performance of gain lever laser diode

Amplitude Modulation Response and Linearity Improvement of Directly Modulated Lasers Using Ultra-Strong Injection-Locked Gain-Lever Distributed Bragg Reflector Lasers

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