In this Letter we report on the use of ultrashort infrared laser pulses to generate a copious amount of electrons by a copper cathode in an rf photoinjector. The charge yield verifies the generalized Fowler-Dubridge theory for multiphoton photoemission. The emission is verified to be prompt using a two pulse autocorrelation technique. The thermal emittance associated with the excess kinetic energy from the emission process is comparable with the one measured using frequency tripled uv laser pulses. In the high field of the rf gun, up to 50 pC of charge can be extracted from the cathode using a 80 fs long, 2 microJ, 800 nm pulse focused to a 140 mum rms spot size. Taking into account the efficiency of harmonic conversion, illuminating a cathode directly with ir laser pulses can be the most efficient way to employ the available laser power.

We show theoretically and experimentally that enhancements of up to 40 dB in the efficiency of optical transmission of microwave signals can be obtained by using a single quantum well laser transmitter whose contact is segmented into two sections, and modulation is applied to one of the sections. The improvement is dependent fundamentally on the relaxation oscillation frequency of the device, with the improvement factor dropping to around 15 dB at relaxation oscillation frequencies approaching 10 GHz.

The control of ion energy and angular distributions (IEADs) is critically important for anisotropic etching or deposition in microelectronic fabrication processes. With single frequency capacitively coupled plasmas (CCPs), the narrowing in angle and spread in energy of ions as they cross the sheath are definable functions of frequency, sheath width, and mean free path. With increases in wafer size, single frequency CCPs are finding difficulty in meeting the requirement of simultaneously controlling plasma densities, ion fluxes, and ion energies. Dual-frequency CCPs are being investigated to provide this flexible control. The high frequency (HF) is intended to control the plasma density and ion fluxes, while the ion energies are intended to be controlled by the low frequency (LF). However, recent research has shown that the LF can also influence the magnitude of ion fluxes and that IEADs are determined by both frequencies. Hence, separate control of fluxes and IEADs is complex. In this paper, results from a two-dimensional computational investigation of Ar/O 2 plasma properties in an industrial reactor are discussed. The IEADs are tracked as a function of height above the substrate and phase within the rf cycles from the bulk plasma to the presheath and through the sheath with the goal of providing insights to this complexity. Comparison is made to laser-induced fluorescence experiments. The authors found that the ratios of HF/LF voltage and driving frequency are critical parameters in determining the shape of the IEADs, both during the transit of the ion through the sheath and when ions are incident onto the substrate. To the degree that contributions from the HF can modify plasma density, sheath potential, and sheath thickness, this may provide additional control for the IEADs. V

Extraction of negative ions from pulsed electronegative inductively coupled plasmas having a radio-frequency substrate biasThe dynamics of ions traversing sheaths in low temperature plasmas are important to the formation of the ion energy distribution incident onto surfaces during microelectronics fabrication. Ion dynamics have been measured using laser-induced fluorescence (LIF) in the sheath above a 30 cm diameter, 2.2 MHz-biased silicon wafer in a commercial inductively coupled plasma processing reactor. The velocity distribution of argon ions was measured at thousands of positions above and radially along the surface of the wafer by utilizing a planar laser sheet from a pulsed, tunable dye laser. Velocities were measured both parallel and perpendicular to the wafer over an energy range of 0.4-600 eV. The resulting fluorescence was recorded using a fast CCD camera, which provided resolution of 0.4 mm in space and 30 ns in time. Data were taken at eight different phases during the 2.2 MHz cycle. The ion velocity distributions (IVDs) in the sheath were found to be spatially non-uniform near the edge of the wafer and phase-dependent as a function of height. Several cm above the wafer the IVD is Maxwellian and independent of phase. Experimental results were compared with simulations. The experimental time-averaged ion energy distribution function as a function of height compare favorably with results from the computer model. V C 2013 AIP Publishing LLC. [http://dx.

Ion dynamics are investigated in a dual frequency radio frequency sheath as a function of radius above a 30 cm diameter biased silicon wafer in an industrial inductively coupled (440 kHz, 500 W) plasma etch tool. Ion velocity distribution (IVD) function measurements in the argon plasma are taken using laser induced fluorescence. Planar sheets of laser light enter the chamber both parallel and perpendicular to the surface of the wafer in order to measure both parallel and perpendicular IVDs at thousands of spatial positions. A fast (30 ns exposure) charge coupled device camera measures the resulting fluorescence with a spatial resolution of 0.4 mm. The dual-frequency bias on the wafer is comprised of a 2 MHz low frequency (LF) bias and a 19 MHz high frequency bias. The laser is phase locked to the LF bias and IVD measurements are taken at several different LF phases. Ion energy distribution (IED) function measurements and calculated moments are compared for several cases. IEDs were measured at two disparate phases of the phase-locked LF bias. IEDs were found to be multipeaked and were well-approximated by a sum of Maxwellian distributions. The calculated fluxes in the dual frequency case were found to be substantially more radially uniform than the single frequency bias case. For industrial applications, this radially uniform ion flux is evidently a trade off with the undesirable multipeaked structure in the IEDs.