Ultrahigh‐Performance Self‐Powered Flexible Double‐Twisted Fibrous Broadband Perovskite Photodetector

Abstract

Self-powered flexible photodetectors without an external power source can meet the demands of next-generation portable and wearable nanodevices; however, the performance is far from satisfactory becuase of the limited match of flexible substrates and light-sensitive materials with proper energy levels. Herein, a novel self-powered flexible fiber-shaped photodetector based on double-twisted perovskite-TiO -carbon fiber and CuO-Cu O-Cu wire is designed and fabricated. The device shows an ultrahigh detectivity of 2.15 × 10 Jones under the illumination of 800 nm light at zero bias. CuO-Cu O electron block bilayer extends response range of perovskite from 850 to 1050 nm and suppresses dark current down to 10 A. The fast response speed of less than 200 ms is nearly invariable after dozens of cycles of bending at the extremely 90 bending angle, demonstrating excellent flexibility and bending stability. These parameters are comparable and even better than reported flexible and even rigid photodetectors. The present results suggest a promising strategy to design photodetectors with integrated function of self-power, flexibility, and broadband response.

Gradient Energy Band Driven High‐Performance Self‐Powered Perovskite/CdS Photodetector

“…[1][2][3][4] These merits make perovskite as an excellent building block for high-performance photodetectors. The commonly used electron extraction layers in perovskite photodiodes are TiO 2 , [8,9] SnO 2 , [10,11] C 60 , [12,13] and phenyl-C61 butyric acid methyl ester (PCBM). Apart from the integrated system with an energy conversion or harvester unit, [5][6][7] the perovskite photodiode is an excellent alternative in terms of simple structure, light weight, and portability.…”

“…Tailoring the gradient bandgap from 0.35 to 1.42 eV, Pan and co-workers synthesized InAs x P 1-x nanosheets for band-selective infrared photodetectors. The commonly used electron extraction layers in perovskite photodiodes are TiO 2 , [8,9] SnO 2 , [10,11] C 60 , [12,13] and phenyl-C61 butyric acid methyl ester (PCBM). [24] In p-i-n structured devices, [25][26][27][28] graded composition (bandgap) is basically used in the main photosensitive layer, for which the narrow bandgap region increases the absorption wavelength range, the large bandgap results in a high voltage output, and graded bandgap structure promotes the carriers transport.…”

Flexible and Self‐Powered Lateral Photodetector Based on Inorganic Perovskite CsPbI3–CsPbBr3 Heterojunction Nanowire Array

“…[ 1–13 ] Specifically, self‐powered perovskite photodetector can work without external energy source, depending on a built‐in electric field which can separate the light‐induced carrier. [ 14–16 ] The most studied device type is the vertical heterojunction. However, a vertical device consisting of charge transport layers and top electrodes would cause the loss of the incident light and abundant defects at the interface, degrading the device performance.…”

Asymmetric Contact‐Induced Self‐Driven Perovskite‐Microwire‐Array Photodetectors

“…[27] The detector exhibited an acceptable response speed with rise/decay times of 80/240 µs. [32][33][34][35] However, to the best of our knowledge, PV-type photodetectors employing perovskite MWs/NWs as the photoactive materials have been far scarcely explored to date. ), high-frequency light detection is essentially required.…”